Описаны методики прецизионной обработки поверхности оптических элементов пучками ускоренных ионов. Приведены характеристики и возможности оборудования, а также решаемые с помощью него задачи. Подробно описаны возможности финишной коррекции локальных ошибок формы малоразмерным ионным пучком, осесимметричной коррекции/асферизации широкоапертурным сильноточным ионным пучком и ионной полировки. Представлены значения эффективной шероховатости поверхности плавленого кварца, ситалла, Zerodur'а, ULE в диапазоне пространственных частот q[2.5·10-2-6.0·101 μm-1], а также примеры формирования сферической поверхности и профиля асферизации. Ключевые слова: ионно-пучковая методика, пучок ускорения, кварц, ситалл.

The paper presents the results of studying the energy dependences of the sputtering coefficient and the effective surface roughness of single-crystal silicon irradiated with neon ions with an energy of 100-1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ne ions were determined, providing a high sputtering coefficient (etching rate) and an effective roughness value in the spatial frequency range 4.9∙10-2-6.3∙101 μm-1 less than 0.3 nm for the main cuts of single-crystal silicon (<1 0 0>, <1 1 0> and <1 1 1>).

The paper presents the results of studying the energy dependences of the sputtering yields and the value of the effective surface roughness of single-crystal silicon upon irradiation with argon ions with an energy of 200-1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ar ions were determined, providing a high sputtering yield (etching rate) and an effective roughness value in the spatial frequency range 4.9*10-2-6.3*101 μm-1 less than 0.3 nm for the main cuts monocrystalline silicon <1 0 0>, <1 1 0> and <1 1 1>.

The paper proposes to use the discharge energy for the synthesis of chemically active particles in order to correct the shape and aspherize the surface of optical elements by reactive ion-beam etching. A stand was assembled on the basis of a radio frequency source of accelerated ions KLAN-105M, the design of which allows working with reactive gases. The possibility of increasing the etching rate of fused quartz by more than 5 times compared to ion etching with inert gases by creating a mixture of tetrafluoromethane (CF4) and argon (Ar) in a ratio of 1:1 is shown, while maintaining the initially smooth surface roughness (σeff0.3 nm) in the range of spatial frequencies ν[5.010-2-6.4101 μm-1].

The paper proposes the use of diamond-carbide-silicon composite "Skeleton"® coated with amorphous silicon as substrates for multilayer X-ray mirrors for powerful synchrotron radiation sources (3rd+ and 4th generation). The surfaces with the following parameters were obtained using standard deep polishing methods: flatness at the level of RMS90%=54.2 nm; effective roughness sigmaeff~1.0 nm; high-frequency roughness sigma2х2~0.1 nm.