AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, thermal resistance, and spectral characteristics was revealed. Microdisks lase in continuous-wave mode without external cooling with the threshold current density of 0.7 kA/cm2. Lasing wavelength remains stable (<0.1 nm/mA) against injection current increment.

In this work, the influence of substrate temperature on morphological and optical properties of branched InGaN nanostructures on the Si(111) surface during MBE growth was studied. It was shown that an increase of the substrate temperature leads to a change in the morphology of InGaN nanostructures. In particular, the height of InGaN nanocolumns, which are formed at the initial stage of growth, increases. At the same time, an increase in the growth temperature of InGaN nanostructures leads to an increase in the intensity of the photoluminescence spectra from such structures, and the dependences of the integrated photoluminescence intensity on the excitation power are linear in both cases. All these facts indicate the promise of such structures for optical applications, for example, for creating white LEDs based on a single material

Приведены данные по росту и исследованию свойств наноструктур типа " вставка InAsP, внедренная в InP нитевидный нанокристалл", выращенных на поверхности Si(111) методом молекулярно-пучковой эпитаксии с использованием золота в качестве катализатора. Установлено, что возможно получение практически 100% когерентных нитевидных нанокристаллов с поверхностной плотностью, варьируемой в широком интервале, и установлена взаимосвязь между структурными и оптическими свойствами выращенных нитевидных нанокристаллов. Показано, что исследуемые нитевидные нанокристаллы являются чистыми с точки зрения кристаллографической фазы (вюрцит). Предлагаемая технология открывает новые возможности по интеграции прямозонных соединений A III B V и кремния.

Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.

Microlasers formed by deep etching with an active region based on arrays of InGaAs/GaAs quantum well-dots were studied. The way how the current-voltage characteristic changes with decreasing microlaser diameter indicates the formation of a nonconducting layer about 1.5 μm thick near the side walls, which leads to a decrease in the effective area of current flow