The dielectric and polar properties of thin films of aluminum nitride (AlN) epitaxially grown on variously oriented p-type silicon substrates with a buffer sublayer of silicon carbide (SiC), as well as on vicinal planes, are studied. According to the results of studies of the polar properties by two independent methods — the dynamic pyroelectric effect and piezoelectric force microscopy, it was shown that the use of a SiC buffer layer significantly improves the polar properties of thin layers of aluminum nitride.

The microstructure, dielectric, and pyroelectric properties of AlxGa1-xN composite epitaxial layers grown on SiC / (111) Si substrates by chloride-hydride epitaxy are studied. In the process of layer growth, the phenomenon of spontaneous formation of heterojunctions was discovered. Based on AlxGa1-xN epitaxial layers, a material has been obtained which currently has one of the highest pyroelectric coefficients for crystals (or thin films) of aluminum nitride.