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The thermal conductivity λ of amorphous, crystalline, and liquid selenium (purity 99,99999 %) is measured in the temperature range 80 to 525°K which includes the softening (T ≈ 31°C) and melting points. The thermal conductivity of amorphous selenium increases linearly with temperature up to 304°K at which temperature there is a discontinuity involving a sharp increase of about 40%. Admixtures of Cd and Tl change the values of the discontinuity Δλg and temperature Tg. An admixture of Cd shifts the value of Δλg from 0.44 × 10−3 to 0.11 × 10−3 cal/(cm s degree) and increases Tg from 30.7 to 33.5°C. Heat treatment increases λ and changes its temperature profile. Admixtures of Tl remove the discontinuity. The thermal conductivity of selenium during melting undergoes a discontinuity of about 40% which is explained by the increase in the intermolecular distance from 3.46 to 3.74 Å. A photon thermal conductivity, which accounts for up to 30% of the overall thermal conductivity, is found in crystalline selenium at temperatures above about 350°K. The experimentally determined value of λ, its temperature dependence, the values of the softening and melting discontinuities and the photon parts agree well with theory.

It is established several, previously obscure, properties of selenium are due t o the presence of oxygen and to oxygen complex formation. The properties include the appearance of an extremum in the curves of the concentration dependence of electroconductivity (a), thermoelectromotive force (0), thermal conductivity (A), density (e), mechanical strength, activation energy during self diffusion ( A E ) , and microhardness ( H ) . Other properties are the shift of the second maximum in the photoconductivity curve during the introduction of different admixtures, the decrease of a and 0 during melting, and the instability of the parameters of selenium instruments. B HaHHOa pa60Te YCTaHOBJIeHO, 9 T O A 0 CMX IIOp HerIOHfITHbIe CBOaCTBa CeneHa, KaH IlORBJIeHMe 3HCTpeMyMa Ha HPMBbIX HOHUeHTpalIMOHHO~ 3aBHCnMOCTM 3JIeK-TPOIIPOBOAHOCTH (a), TepMO3AC ( O ) , TeIIJlOIlpOBO~HOCT~ (A), IIJIOTHOCTH (@), MeXaHM-9eCKOfi IIP04HOCTM, 3~eprMM aHTHBa4MM npM CaMOAM@@Y3UH ( A E ) , MMHPOTBBP-ROCTI? ( H ) , cMeUeHae BToporo MaKcnMyMa Ha KPHBOB QOTOII~OBORHMOCTM npn RseAeHm p a a~b~x npMMecefi, c~a u~o o 6 p a 3~o e yMeHLilreHne a M 0 npa nnaBneHMn B ceaeHe npMMecM mcnopona M ero H O M~J I~I~C O O~~~~O B~H M~M .

A robust embedded ladder-oxide (k ¼ 2:9)/copper (Cu) multilevel interconnect is demonstrated for 0.13 mm complementary metal oxide semiconductor (CMOS) generation. A stable ladder-oxide intermetal dielectric (IMD) is integrated by the Cu metallization with a minimum wiring pitch of 0.34 mm, and a single damascene (S/D) Cu-plug structure is applied. An 18% reduction in wiring capacitance is obtained compared with that in SiO 2 IMDs. The superior controllability of metal thickness by the S/D process enables us to enhance the MPU maximum frequency easily. The stress-migration lifetime of vias on wide metals for the S/D Cu-plug structure is longer than that for a dual damascene (D/D) structure. Reliability test results such as electromigration (EM), the temperature dependant dielectric breakdown (TDDB) of Cu interconnects, and pressure cooker test (PCT) results are acceptable. Moreover, a high flexibility in a thermal design is obtained.

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