：Because of their excellent optical and electrical properties and the special band structure, topological insulators have great prospects in the development of high-performance broadband photodetectors. However, owing to the late discovery of topological insulators, research based on them, in the field of photodetectors, is still in its early stages. Therefore, there are several problems that need to be resolved, such as the preparation of topological insulator materials of a higher quality. This review summarizes the development of topological insulator materials and further delineates the research progress of photodetectors, based on topological insulator materials from the perspective of material preparations and material systems; furthermore, it details the prospects for the development of topological insulator materials in the field of photodetectors.

：Infrared technologies provide tremendous value to our modern-day society, in the fields of remote sensing, imaging, metrology, product inspection, environmental monitoring, and biomedical diagnostics. The demand for the third-generation infrared photodetectors, to enable easy-to-fabricate, low-cost, and tunable infrared active optoelectronic materials, has driven the development of infrared colloidal quantum dots (CQDs). This review introduces the preparation methods of infrared CQDs and development of infrared CQD detectors, and lists the representative research results of CQDs in the field of optoelectronics. Finally, the infrared quantum dot photodetectors are summarized, and several research problems are proposed. The results of this study guide the commercialization of the infrared quantum dot detector.

：The amorphous, -GeTe, and -GeTe phases of GeTe can be stably converted to each other under certain conditions. Because doping-based high-concentration holes can improve the thermoelectric and ferroelectric performances of GeTe, and it can be converted quickly between its amorphous and crystalline phases, GeTe has been applied to thermoelectric devices, spintronic devices, phase change switches, phase change memory, and others. Moreover, GeTe has a narrow optical band gap and high carrier mobility, which is expected to contribute positively to the development of high-performance infrared detectors. However, its application in the infrared detector field is still new. In this paper, its physical characteristics and its applications in areas including the thermoelectric, spintronic, and phase transition fields are reported. Based on its photoelectric properties, its application in the infrared detector field is expected.

：Because of their excellent optical and electrical properties and the special band structure, topological insulators have great prospects in the development of high-performance broadband photodetectors. However, owing to the late discovery of topological insulators, research based on them, in the field of photodetectors, is still in its early stages. Therefore, there are several problems that need to be resolved, such as the preparation of topological insulator materials of a higher quality. This review summarizes the development of topological insulator materials and further delineates the research progress of photodetectors, based on topological insulator materials from the perspective of material preparations and material systems; furthermore, it details the prospects for the development of topological insulator materials in the field of photodetectors.