1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

Shchekin, O.B.; Deppe, D.G.

doi:10.1063/1.1476708

Cited by 356 publications

(199 citation statements)

References 13 publications

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“…This is consistent with previous measurements, where the value of ␣ i was inferred from threshold current measurements performed on devices of different lengths, where an increase in waveguide loss was only observed at higher levels of doping than that used here. 11 All three samples show similar absorption characteristics with ground state absorption occurring at around 0.973 eV and an excited state transition centered around 1.040 eV. The strength of the absorption is also approximately the same for each sample.…”

Section: Experimental Methods and Resultsmentioning

confidence: 50%

“…[7][8][9] The modeling of p-doped quantum dot structures, which predicts the reduced threshold current and improved modulation response due to an increased peak modal gain and differential gain, 10 has been reported, and this modeling is consistent with experimentally observed data including laser wavelength as a function of cavity length. 11 However, the threshold current density measured in most of these p-doped laser structures ͑e.g., Refs. 8 and 9͒ appears to be higher than those in corresponding undoped structures and the mechanisms by which p doping affects the threshold current density are a matter of current debate.…”

Section: Introductionmentioning

confidence: 99%

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Gain in p-doped quantum dot lasers

Smowton

Sandall

Liu

et al. 2007

Journal of Applied Physics

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We directly measure the gain and threshold characteristics of three quantum dot laser structures that are identical except for the level of modulation doping. The maximum modal gain increases at fixed quasi-Fermi level separation as the nominal number of acceptors increases from 0 to 15 to 50 per dot. These results are consistent with a simple model where the available electrons and holes are distributed over the dot, wetting layer, and quantum well states according to Fermi-Dirac statistics. The nonradiative recombination rate at fixed quasi-Fermi level separation is also higher for the p-doped samples leading to little increase in the gain that can be achieved at a fixed current density. However, we demonstrate that in other similar samples, where the difference in the measured nonradiative recombination is less pronounced, p doping can lead to a higher modal gain at a fixed current density.

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Section: Experimental Methods and Resultsmentioning

confidence: 50%

Section: Introductionmentioning

confidence: 99%

Gain in p-doped quantum dot lasers

Smowton

Sandall

Liu

et al. 2007

Journal of Applied Physics

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“…The initial decrease in threshold current in the p-doped quantum dot structures has been attributed to a decrease in the nonradiative Auger process as the temperature is increased towards room temperature. However, it is known that p doping can significantly reduce the temperature sensitivity of the gain and threshold current; 8 and in this letter we will show that the negative temperature dependence of threshold is almost entirely due to the temperature dependence of the gain.…”

mentioning

confidence: 95%

Temperature dependence of threshold current in p-doped quantum dot lasers

Sandall

Smowton

Thomson

et al. 2006

Applied Physics Letters

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The authors measure the temperature dependence of the components of threshold current of 1300 nm undoped and p-doped quantum dot lasers and show that the temperature dependence of the injection level necessary to achieve the required gain is the largest factor in producing the observed negative T 0 in p-doped quantum dot lasers. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2361167͔ p-type modulation doped In͑Ga͒As quantum dot lasers have attracted much interest recently, partially due to reports of an infinite or negative characteristic temperature ͑T 0 ͒ around room temperature. 1-3 Several authors have attributed this behavior to the temperature dependence of the Auger recombination process in doped structures, 2,4,5 although the particulars of the explanation varied in each case. In this work we report on measurements made on both intrinsic and p-doped quantum dot structures that emit at 1.3 m. From studying the radiative and nonradiative components of the threshold current we show that the temperature performance of p-doped lasers can be described without needing to consider Auger recombination.Two samples were grown by solid source molecular beam epitaxy on 3 in. n + ͑100͒ GaAs substrates. The devices were nominally identical except for the level of modulation doping. The active region consisted of five dot-in-a-well ͑DWELL͒ repeats, where each DWELL was made up of 3.0 ML of InAs grown on 2 nm of In 0.15 Ga 0.85 As and then capped by a further 6 nm of In 0.15 Ga 0.85 As, and these were then separated by 50 nm GaAs spacers. The active region was incorporated into a GaAs-Al 0.4 Ga 0.6 As waveguide structure. The lower n-contact region was doped with Si at 5 ϫ 10 18 cm −3 while the upper p contact was doped with Be at 5 ϫ 10 17 cm −3 , the p contact was finished with a 300 nm layer of GaAs doped at 1 ϫ 10 19 cm −3 . The growth temperature for the cladding layers was 620°C, while the InAs layers were grown at 510°C, the GaAs spacers were grown in two temperature steps; the first 15 nm at 510°C and the final 35 nm at 580°C, forming the so called high growth temperature spacer layers. 6 The doping consisted of Be atoms incorporated over a 6 nm region of GaAs situated 9 nm below each DWELL at a concentration of either 0 or 7.5 ϫ 10 17 cm −3 corresponding to either 0 or 15 acceptor atoms per quantum dot. Previous work on these structures has shown that the absorption spectra, and therefore the quantum dot states, are the same for the two structures. 7The threshold current was measured as a function of temperature on 2000 m long, 50 m wide oxide stripe lasers for both structures under pulsed conditions with a pulse length of 400 ns and a repetition rate of 1 kHz to avoid any self-heating, and this is shown in Fig. 1. The undoped structure shows a monotonically increasing threshold current from low to high temperatures as is normally observed for undoped quantum dot and quantum well structures. The p-doped structure exhibits a threshold current density that decreases as the temperature increases from 200 K r...

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“…QD lasers with an emission wavelength around and well beyond 1.3 m, 1-3 low threshold current, 2 low chirp, 4 and reduced temperature sensitivity 3,5 have been demonstrated. Lasing can be achieved on any of the QD discrete energy states, thus at well separated wavelengths, depending on the cavity loss.…”

Section: Introductionmentioning

confidence: 99%

Two-state switching and dynamics in quantum dot two-section lasers

Markus

Rossetti

Calligari

et al. 2006

Journal of Applied Physics

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Scollo, R. (2006). Two-state switching and dynamics in quantum dot two-section lasers. Journal of Applied Physics, 100 (11) Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationGeneral rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policyIf you believe that this document breaches copyright please contact us at:openaccess@tue.nl providing details and we will investigate your claim. The electrical control of the lasing wavelength in two-section quantum dot lasers is investigated. By changing the optical loss in the absorber section, the control of the ground-state ͑GS͒ and excited-state ͑ES͒ lasing thresholds and output powers is achieved. Additionally, a complex self-pulsation dynamics with simultaneous oscillations of the GS and ES intensities is observed. The experimental results are well explained in the framework of a rate equation model.

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1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

Cited by 356 publications

References 13 publications

Gain in p-doped quantum dot lasers

Gain in p-doped quantum dot lasers

Temperature dependence of threshold current in p-doped quantum dot lasers

Two-state switching and dynamics in quantum dot two-section lasers

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