10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988.
DOI: 10.1109/gaas.1988.11038
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12-40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors

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Cited by 40 publications
(2 citation statements)
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“…Chen et al[69] have reported on the minimum noise figure of a InP/InGaAs HBT over a range of bias currents. The minimum noise figure, at a single bias condition, has also been reported by Asbeck et al[6] and Kim et al[70]. However, the overall high frequency noise characteristics of HBTs have not previously been described in detail.…”
supporting
confidence: 68%
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“…Chen et al[69] have reported on the minimum noise figure of a InP/InGaAs HBT over a range of bias currents. The minimum noise figure, at a single bias condition, has also been reported by Asbeck et al[6] and Kim et al[70]. However, the overall high frequency noise characteristics of HBTs have not previously been described in detail.…”
supporting
confidence: 68%
“…In the previous two sections, a process was described which may be used to model the nonlinear characteristics of HBT oscillators. In this section, the characteristics of the AlGaAs/GaAs HBTs at a single bias condition, has also been reported by Asbeck et al [6] and Kim et al [70]. It appears that no comprehensive analysis of the high frequency noise characteristics of HBTs has been reported.…”
Section: Bias Dependent Hbt Noise Modelsmentioning
confidence: 75%