15.4: Fabrication of 5.5‐inch AMOLED Panel using IGZO TFTs

Huang, Jhih-Jie; Su, Cheng‐Kuan; Qiao, Xiaoping; Li, Yuanhang; Ruan, Sangsang; Chen, Yuhuai; Song, Shuang; Wang, Haiyan; Huang, Yizhen; Tseng, Chih‐Yuan

doi:10.1002/sdtp.13421

Cited by 4 publications

(3 citation statements)

References 13 publications

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“…In addition, when the IGZO thin films are deposited on to suitable substrates, the IGZO-based TFTs can be used to form fully transparent flexible displays. Flexible displays driven by IGZO-based TFTs have been researched in many works [13,31,34,116] . For example, in 2009, Park et al fabricated a 6.5 inch full-color flexible AMOLED on the polyimide (PI) substrate driven by a-IGZO-based TFTs [13] .…”

Section: Flexible Displaysmentioning

confidence: 99%

“…Flexible displays driven by IGZO-based TFTs have been researched in many works [13,31,34,116] . For example, in 2009, Park et al fabricated a 6.5 inch full-color flexible AMOLED on the polyimide (PI) substrate driven by a-IGZO-based TFTs [13] . The a-IGZObased TFT showed a V th of 0.9 V, an SS of 0.25 V/dec, a μ FE of 15.1 cm 2 /(V•s).…”

Section: Flexible Displaysmentioning

confidence: 99%

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Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Zhu

Jiang

et al. 2021

J. Semicond.

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Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This article reviews the recent progress and major trends in the field of IGZO-based TFTs. After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs, an overview of IGZO materials and IGZO-based TFTs is given. In this part, IGZO material electron travelling orbitals and deposition methods are introduced, and the specific device structures and electrical performance are also presented. Afterwards, the recent advances of IGZO-based TFT applications are summarized, including flat panel display drivers, novel sensors, and emerging neuromorphic systems. In particular, the realization of flexible electronic systems is discussed. The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.

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Section: Flexible Displaysmentioning

confidence: 99%

Section: Flexible Displaysmentioning

confidence: 99%

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Zhu

Jiang

et al. 2021

J. Semicond.

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“…In a future influenced by the Internet of Things (IoT), artificial intelligence, smart assistance systems, supportive electronics collecting and processing data will be present in nearly all facets of our society [1][2][3]. Although such visions are typically associated with a digital society, a significant driving force behind these developments are specialized analog systems capable to transmit and receive data [4], condition sensors' parameters [5,6], drive actuators [7,8], and/or harvest and control power [9]. Nowadays it is widely accepted that electronic thin-film circuits fabricated on soft and large-area substrates represent a very promising technological platform to realize costefficient systems that can be unobtrusively integrated into our environment [4,10,11].…”

Section: Introductionmentioning

confidence: 99%

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

Cantarella

Costa

Meister

et al. 2020

Flex. Print. Electron.

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Thanks to the extraordinary advances flexible electronics have experienced over the last decades, applications such as conformable active-matrix displays, ubiquitously integrated disposable flexible sensor nodes, wearable or textile-integrated systems, as well as imperceptible and transient implants are now reachable. To enable these applications, specialized analog circuits able to transmit and receive data, condition sensors' parameters, drive actuators or control powering devices are required. High-performance sensor conditioning, driving and transceiver circuits on a wide range of flexible substrates are therefore extremely important to develop. However, the currently available materials and processes compatible with mechanically flexible substrates impose massive limitations in terms of large-area uniformity, device dimensions' shrinkability and circuit design, challenging the realization of flexible analog systems. Among state-of-the-art technologies employing low-temperature fabrication processes, thin-film transistors (TFTs) based on metal oxide semiconductors represent the potentially best compromise in terms of prize, performance, technology maturity and capacity to realize complex systems. This is why metal oxide TFTs are nowadays widely used for flexible, light-weight, transparent, stretchable and bio-degradable analog circuits and systems. Here, we review the current trends of flexible metal oxide TFTs for analog applications. First, an introduction is given, where current challenges and requirements related to the realization of flexible analog circuits and systems are analysed. Additionally, TFT performance parameters and configurations are briefly revised. Then, the recent advances in the field of flexible metal oxide TFTs for analog applications are summarized. In particular, all reported approaches to reduce the channel length and improve the AC performance are shown. Next, the current state of flexible metal oxide TFT-based analog circuits is shown, discussing n-type only and complementary circuit configurations. The last topic of the review covers systems based on flexible metal oxide analog circuits. Finally, a conclusion is drawn and an outlook over the field is provided.

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Enlightenment of Deionized‐Water Bathing IGZO TFTs

Qian,

Gu,

et al. 2024

Adv Elect Materials

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At present, amorphous indium–gallium–zinc oxide (IGZO) semiconductor has become the most commonly used semiconductor material and is widely used in flat panel displays and various sensors, but its performance is greatly affected by environmental factors, especially water. This study investigates the instability of IGZO thin‐film transistors (TFTs) soaked in deionized water. After 24 h bathing, the field‐effect mobility and threshold voltage change a little, but the subthreshold swing, positive bias stress and negative bias stress stability undergo clear degradation. Through comprehensive examination of the changes in the chemical composition, surface morphology and thickness of the IGZO films, it's found that IGZO experiences selective etching by deionized water, and consequently the film surface becomes rough and rich of In and oxygen vacancies, which can explain the variations on device performance well. In addition to the bathing experiment performed on In2O3, Ga2O3, and ZnO TFTs, a schematic image of the reaction between water and IGZO is depicted, showing the preferential loss of Ga and Zn located next to the oxygen vacancy.

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15.4: Fabrication of 5.5‐inch AMOLED Panel using IGZO TFTs

Cited by 4 publications

References 13 publications

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

Enlightenment of Deionized‐Water Bathing IGZO TFTs

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