We have sucessfully developed 5.5‐inch AMOLED display by utilizing IGZO (Indium‐Gallium‐Zinc‐Oxide) transistor. In order to verify the metal oxide TFTS for AMOLED applications, the OLED evaporation and further processes are employed to complete the display panel. This IGZO TFT device with excellent Vth uniformity on a Gen6 glass.The Vth deviation of TFTs in panel is only 0.65V.

We developed a 5.5 inch real HD AMOLED smartphone with IGZO backplane. The a-IGZO TFT with Etching Stop Layer (ESL) structure was fabricated at Gen 6 glass substrate. The a-IGZO shows its superiority in low cost and low leakage current. The high reliability of a-IGZO TFT was demonstrated. The optical and electrical characteristics of OLED cell are also shown.

In order to fully enjoy the most out of the latest games, gaming displays have gradually become the mainstream of the market with high frame rate and high stability. A high frame rate display allows players to anticipate game dynamics by providing accurate images with high response time, especially in some first‐person shooting (FPS) game. In this paper, we will introduce an 11.6 inch “FHD” back‐channel‐etch‐structured full screen notch of TFT‐LCD panel with a frame rate of 144Hz and narrow bezel by using a‐IGZO process that has been successfully fabricated in Gen 6 factory. The device with Ti/Al/Ti as source/drain was demonstrated with good electronic property and bias‐temperature‐stress stability. The Ion/Ioff of the BCE type TFTs are 1010.

A 10.95” in cell touch LCD with IGZO backplane was developed in this work. The transmittance is as high as 6.65% with APCF. The 120 Hz frame rate reduces the latency on the stylus pen. The middle com structure with organic layer can decrease the parasitic capacitance of common electrode which influences the SNR of pen.

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