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We have sucessfully developed 5.5‐inch AMOLED display by utilizing IGZO (Indium‐Gallium‐Zinc‐Oxide) transistor. In order to verify the metal oxide TFTS for AMOLED applications, the OLED evaporation and further processes are employed to complete the display panel. This IGZO TFT device with excellent Vth uniformity on a Gen6 glass.The Vth deviation of TFTs in panel is only 0.65V.

We developed a 5.5 inch real HD AMOLED smartphone with IGZO backplane. The a-IGZO TFT with Etching Stop Layer (ESL) structure was fabricated at Gen 6 glass substrate. The a-IGZO shows its superiority in low cost and low leakage current. The high reliability of a-IGZO TFT was demonstrated. The optical and electrical characteristics of OLED cell are also shown.