193-nm multilayer imaging systems

Meador, James D.; Holmes, D.; DiMenna, William L.; Nagatkina, Mariya I.; Rich, Michael D.; Flaim, Tony D.; Bennett, R.J.; Kobayashi, Ichiro

doi:10.1117/12.485082

Cited by 11 publications

(6 citation statements)

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“…The standard EL stripping test was used to assess sensitivity to photoresist solvents. 10 In the absence of a covering resist, the BARC post-exposure bake (PEB) parameters were 130°C for 90 seconds. The effects of 0.26 normal (N) aqueous tetramethylammonium hydroxide (TMAH) developer on both light-exposed and unexposed (dark loss) BARC coatings were measured using a 60-second puddle, a 5-second deionized water rinse, and a spin dry.…”

Section: Methodsmentioning

confidence: 99%

Dual-layer dye-filled developer-soluble BARCs for 193-nm lithography

Meador

Beaman

Stroud

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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A family of dye-filled developer-soluble bottom anti-reflective coatings (BARCs) has been developed for use in 193-nm microlithography. This new dye-filled chemical platform easily provides products covering a wide range of optical properties. The light-sensitive and positive-working BARCs use a transparent polymeric binder and a polymeric dye in a thermally crosslinking formulation, with the cured products then being photochemically decrosslinked prior to development. The cured BARC films are imaged and removed with developer in the same steps as the covering photoresist. Two dye-filled BARCs with differing optical properties were developed via a series of DOEs and then used as a dual-layer BARC stack. Lithography with this BARC stack, using a 193-nm resist, gave 150-nm L/S (1:1). A 193-nm dual-layer BARC stack (gradient optical properties) from the well-established dye-attached family of lightsensitive BARCs also gave 150-nm L/S (1:1) with the same resist. However, the latter provided much improved line shape with no scumming. The targeted application for light-sensitive dual-layer BARCs is high-numerical aperture (NA) immersion lithography where a single-layer BARC will not afford the requisite reflection control.

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Section: Methodsmentioning

confidence: 99%

Dual-layer dye-filled developer-soluble BARCs for 193-nm lithography

Meador

Beaman

Stroud

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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show abstract

“…The standard ethyl lactate (EL) stripping test (20-second puddle, spin dry at 3000 rpm for 30 seconds) was used to quantify insolubility of the baked coatings, with a product goal being no intermixing with photoresist. 5 Spin-bowl and solution compatibility testing was conducted as described in earlier publications. 6,7 The BARC's optical parameters were measured using a VUV-VASE from J.A.…”

Section: Methodsmentioning

confidence: 99%

Development of 193-nm wet BARCs for implant applications

et al. 2006

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This paper describes the chemistry and performance of a new family of wet-developable (wet) bottom anti-reflective coatings (BARCs) that have been developed for 193-nm implant layer applications. These BARCs, which are light sensitive and positive working, are imaged and developed in the same steps as the covering 193-nm photoresist. The BARCs are spin coated from organic solvents and then insolubilized during a hot plate bake step. The resulting cured films exhibit minimal solubility in numerous organic solvents. Resolution of a photoresist A and light-sensitive BARC I at optimum exposure (Eop) on a silicon substrate was 150-nm L/S (1:1), with good sidewall angle and no scumming. These best-case results utilize a first reflectivity minimum BARC thickness and meet the desired resolution goals for noncritical implant layers. BARC optical parameters can easily be adjusted by altering the polymeric binder. PROLITH™ modeling shows that near zero reflectance can be achieved on a silicon substrate for both a first and a second reflectivity minimum BARC thickness. The light-sensitive, wet BARCs are both spin-bowl and solution compatible with most industry standard solvents. A selected BARC from this family of wet products was shown to be stable, providing reproducible film properties over several months of ambient storage conditions.

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“…Such thickness bias not only creates tremendous complications for the photolithography process, but it also poses great challenges for subsequent processing. Therefore, various planarization techniques were developed to reduce the topography and the thickness bias, including planarizing the antireflective coating, with CON-TACT ® process (20), CMP (35), and multilayer coating approaches (36)(37)(38)(39)(40)(41)(42).…”

Section: Lithography Applicationmentioning

confidence: 99%

CON-TACT® Planarization Process of Spin-on Dielectrics for Device Fabrication

2007

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Planarization has become a necessity for fabricating devices, large and small. Without planarization, a limited number of layers of interconnects or device structures can be successfully fabricated. CON TACT® planarization technology has been used to planarize various spin-on dielectric materials to provide both local and global planarity. Materials such as epoxies, anti-reflective coatings, photoresists, spin-on glass, CycloteneTM, polybenzoxazole, and polyimide have been successfully planarized with up to more than 98% topography reduction. Consequently, the overburden variation was reduced. The planarization performance obtained promises great potential for this technology to provide more consistent, more reliable and otherwise improved device performance for more sophisticated device designs with higher yield.

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193-nm multilayer imaging systems

Cited by 11 publications

References 0 publications

Dual-layer dye-filled developer-soluble BARCs for 193-nm lithography

Dual-layer dye-filled developer-soluble BARCs for 193-nm lithography

Development of 193-nm wet BARCs for implant applications

CON-TACT® Planarization Process of Spin-on Dielectrics for Device Fabrication

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