20W S-band high power amplifier using stacked FET topology

Bent, G. van der; Hek, A.P. de; Vliet, F.E. van

doi:10.1109/eumic.2016.7777480

Cited by 6 publications

(4 citation statements)

References 13 publications

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“…The designed S-band power amplifier was manufactured [22], a photograph of the amplifier is shown in Fig. 26.…”

Section: B Measurement Resultsmentioning

confidence: 99%

“…In [22], the results of a stacked-FET 20 W GaAs S-band HPA with the state-of-the-art performance were reported. This paper documents the structured design that enabled these results.…”

Section: Design Procedures For Integrated Microwave Gaasmentioning

confidence: 99%

“…In Section II, the stacked-FET design procedure is introduced, of which further details are given in the remaining sections. Numerical and design details of the stacked-FETs for the HPA in [22] are given in Section III. The effects of transistor stacking on the obtainable bandwidth are discussed in Section IV.…”

Section: Design Procedures For Integrated Microwave Gaasmentioning

confidence: 99%

See 2 more Smart Citations

Design Procedure for Integrated Microwave GaAs Stacked-FET High-Power Amplifiers

Bent¹,

Hek²,

Vliet³

2019

IEEE Trans. Microwave Theory Techn.

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The application of stacked-FETs in power amplifiers allows for a supply voltage higher than supported by the breakdown voltage of a single transistor. Potential benefits of the increased supply voltage are reduced supply currents and a lower matching ratio at the output of the amplifier. Furthermore, an increased output power per chip area is obtained due to the reduction in passive structures resulting in more area-efficient power combining. In this paper, the procedure for the design of integrated microwave stacked-FET is discussed. Several options for the correct distribution of RF voltage and current swings are investigated and the relationship between the number of stacked transistors and bandwidth is addressed. The procedure is demonstrated by the design of an S-band GaAs stacked-FET containing three transistors. This stacked-FET is applied in an S-band HPA that has a PAE of more than 40% at an output power of 20 W, which is more than twice the output power of any previously reported GaAs stacked-FET HPA.

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“…The designed S-band power amplifier was manufactured [22], a photograph of the amplifier is shown in Fig. 26.…”

Section: B Measurement Resultsmentioning

confidence: 99%

“…In [22], the results of a stacked-FET 20 W GaAs S-band HPA with the state-of-the-art performance were reported. This paper documents the structured design that enabled these results.…”

Section: Design Procedures For Integrated Microwave Gaasmentioning

confidence: 99%

Section: Design Procedures For Integrated Microwave Gaasmentioning

confidence: 99%

See 1 more Smart Citation

Design Procedure for Integrated Microwave GaAs Stacked-FET High-Power Amplifiers

Bent¹,

Hek²,

Vliet³

2019

IEEE Trans. Microwave Theory Techn.

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“…Subsequently, the research [6] using FET transistors produced an output power of 43 dBm with a gain of 17 dB and in research [7] Based on the results of the research [4]- [7], BJT has higher gain characteristics than FET but one of the developments from FET, i.e., GaAs pHEMT, has a higher gain than BJT with a small input voltage source and this can be used up to the frequency range of 100 GHz [1]. In its implementation, BJT is used on devices with high input voltage sources and FET is used on devices with small or high voltage sources [8].…”

Section: Introductionmentioning

confidence: 99%

Design of L-Band Power Amplifier by Using Microstrip-Based GaAs p-HEMT MMG15241H Transistor

Amiruddin¹,

Syihabuddin²,

Wahyu³

2018

INFOTEL

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The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 – 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB.

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