2014
DOI: 10.1002/j.2168-0159.2014.tb00122.x
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33.2: A New Process and Structure for Oxide Semiconductor LCDs

Abstract: A coplanar TFT structure has excellent characteristics in Δ Vp and channel length compared to conventional etch stopper TFT structure in AOS TFT LCD. In this paper, we introduce new 5 mask coplanar structure which reduces two mask steps compared to conventional 7 mask process. And we fabricated 4.5-inch HD resolution panel in our R&D line with our new structure, and its transmittance is 12.5% improved by eliminating contact hole pattern.

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Cited by 8 publications
(5 citation statements)
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“…In terms of integration, IGZO has been shown to be a good contact material in LCD backplanes which can lead to reduction of mask steps in the fabrication process. 10 The deposition of TiO x is carried out in a nitrogen-filled glovebox (H 2 O and O 2 levels below 1 ppm), via sol-gel route. 6 The ethanol-diluted (EtOH) TiO x precursor was spincoated directly onto the ITO substrate at room temperature, with no additional annealing steps.…”
mentioning
confidence: 99%
“…In terms of integration, IGZO has been shown to be a good contact material in LCD backplanes which can lead to reduction of mask steps in the fabrication process. 10 The deposition of TiO x is carried out in a nitrogen-filled glovebox (H 2 O and O 2 levels below 1 ppm), via sol-gel route. 6 The ethanol-diluted (EtOH) TiO x precursor was spincoated directly onto the ITO substrate at room temperature, with no additional annealing steps.…”
mentioning
confidence: 99%
“…The oxide TFT has attracted more and more attention because of its higher mobility comparing to amorphous Si TFT and better uniformity comparing to polycrystalline Si TFTs [1][2][3][4], and the oxide TFT has been used in AMOLED television backplane popularly [5]. Because of the higher mobility of oxide TFT, current change caused by slight variation of Vth will lead obvious display abnormal in AMOLED panel.…”
Section: Introductionmentioning
confidence: 99%
“…Since the first report of TFTs with an amorphous IGZO thin film [1], which consisting of indium(In), gallium(Ga), zinc(Zn) and oxygen(O). The amorphous oxide semiconductors materials have attracted more and more attentions because of their higher mobility comparing to amorphous Si TFTs and better uniformity comparing to polycrystalline Si TFTs and [2] [3][4] [5]. Furthermore, low fabrication temperature of oxide TFT is attractive to display manufactures [6].…”
Section: Introductionmentioning
confidence: 99%