P-11: Development of IGZO ESL Type TFTs at G8.5 for 55” AMOLED TVs

Wang, Dongfang; Yuan, Guangcai; Zhao, Ce Zhou; Zhou, Bin; Liu, Guanghui; Ding, Luke; Wang, Ming; Cheng, Jin; Li, Jun

doi:10.1002/sdtp.10847

Cited by 3 publications

(3 citation statements)

References 8 publications

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“…For a G8.5 glass (2200mm x 2500mm), 64 points TFT I-V measurement showed the uniformity achieved ±0.5 V, and the Vth variation is measured less than -1V and +1V after 7200s under PBTS(VGS=20V 60℃) and NBTS(VGS=-20V 60℃). The hysteresis of TFT is lower than 0.02V, which can meet the requirements for large size AMOLED [5].…”

Section: Figure2 Cross Section View Of Panel Structurementioning

confidence: 85%

24.1: Invited Paper: Development of 55 inch 4K AMOLED TV by Inkjet Printing Process

Yan

et al. 2019

Symp Digest of Tech Papers

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This paper proposed a 55 inch 4K AMOLED TV by using Inkjet printing process. The backplane is based on bottom emission structure with Oxide TFTs, and color filter is integrated on array to achieve wide color gamut. The R/G/B pixels are designed with different aperture ratios to avoid white color shirt during the OLED device decay. The inkjet printing process is optimized by backplane pre‐treatment, nozzle stability maintaining and drying process tuning to implement mura‐free display. The prototype TV shows the good display quality with a high degree of uniformity and wide color gamut. It proves that the inkjet printing process is very promising to be used to manufacture the large‐size and low‐cost AMOLED displays.

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Section: Figure2 Cross Section View Of Panel Structurementioning

confidence: 85%

24.1: Invited Paper: Development of 55 inch 4K AMOLED TV by Inkjet Printing Process

Yan

et al. 2019

Symp Digest of Tech Papers

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“…Indium Gallium Zinc Oxide (IGZO) thin-film transistors (TFTs) are becoming mainstream for the flat panel display (FPD) industry. Maturity of the process and stability of the technology is evident for large area displays [1] initiating the expansion of the technology to other applications, such as RFID tags [2] that in the near future will add sensornodes. Internet-of-Everything requires the integration of the temperature, pressure and humidity sensors to build sensorready RFID tags.…”

Section: Introductionmentioning

confidence: 99%

Flexible selfbiased 66.7nJ/c.s. 6bit 26S/s successive-approximation C-2C ADC with offset cancellation using unipolar Metal-Oxide TFTs

Papadopoulos

Roose

Lai

et al. 2017

2017 IEEE Custom Integrated Circuits Conference (CICC)

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Metal-Oxide thin-film transistors (TFTs) present unique opportunities to develop robust, low-cost and transparent electronics that can mechanically endure on flexible and stretchable substrates over large area in an industry compatible technology. Analog to digital converters (ADC) are an essential part of the Internet-of-Everything, where a multitude of sensing applications are envisaged, such as temperature and pressure sensor tags on human skin. In this work, dual-gate InGaZnO TFTs (IGZO) are demonstrated to achieve a 6-bit successive approximation (SAR) C-2C ADC operated at a clock of up to 400Hz and a power dissipation of 52.2µW at a power supply of V dd =15V. The ADC achieves a differential nonlinearity (DNL) of 0.7LSB and an integral nonlinearity (INL) of 0.58 LSB using only n-type TFTs. A figure of merit (FoM) of 66.7nJ/c.s. is achieved from an ADC on flexible substrate.

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“…of the process, indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are becoming mainstream technology for the flat panel display (FPD) industry [7]. The increasing stability of the TFT technology initiates the expansion of the technology to other applications, such as sensor applications for environment sensitive products or medical prevention and diagnosis [8].…”

mentioning

confidence: 99%

Toward Temperature Tracking With Unipolar Metal-Oxide Thin-Film SAR C-2C ADC on Plastic

Papadopoulos

Roose

Steen

et al. 2018

IEEE J. Solid-State Circuits

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The maturity of metal-oxide thin-film transistors (TFT) highlights opportunities to develop robust and low-cost electronics on flexible and stretchable substrates over large area in an industry-compatible technology. Internet-of-Everything applications with sensor nodes are driving the development of analog-to-digital converters (ADCs). In this paper, a self-biased and self-digital-controlled successive approximation ADC with integrated references and sensor read-in circuitry together with a printed negative temperature coefficient (NTC) sensor using unipolar dual-gate metal-oxide (InGaZnO) TFTs is demonstrated. The system is operated at a clock of up to 400 Hz and a total power dissipation of 245 mW (73 µW from analog) at a maximum power supply of 30 V is measured. The radio-frequency identification-ready ADC comprises of a total of 1394 indium-gallium-zinc oxide TFTs and 31 metal-insulatormetal capacitors. A figure of merit of 26 nJ/c.s. is achieved from the ADC driven from external microcontroller. The robustness of the various blocks of the chip is characterized and the yield is discussed.

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P-11: Development of IGZO ESL Type TFTs at G8.5 for 55” AMOLED TVs

Cited by 3 publications

References 8 publications

24.1: Invited Paper: Development of 55 inch 4K AMOLED TV by Inkjet Printing Process

24.1: Invited Paper: Development of 55 inch 4K AMOLED TV by Inkjet Printing Process

Flexible selfbiased 66.7nJ/c.s. 6bit 26S/s successive-approximation C-2C ADC with offset cancellation using unipolar Metal-Oxide TFTs

Toward Temperature Tracking With Unipolar Metal-Oxide Thin-Film SAR C-2C ADC on Plastic

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