3C-SiC <i>p</i>-<i>n</i> junction diodes

Furukawa, Katsuki; Uemoto, Atsuko; Shigeta, Mitsuhiro; Suzuki, Akira; Nakajima, Shin

doi:10.1063/1.96860

Cited by 51 publications

(9 citation statements)

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“…The diode ideality factor n can be extracted from the high-level injection region, and the typical values are 1.83-1.99, indicating the current transport is dominated by recombination. This latest result shows great improvements from literature, where either too large (n>3, [31,32]) or too small values (n≈1.5, [11]) were observed. In the low-level injection region, ideality factors >2 were obtained, this is most likely due to defect induced carrier recombination [33].…”

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confidence: 56%

A study on free-standing 3C-SiC bipolar power diodes

Renz

Pérez‐Tomás

et al. 2021

Applied Physics Letters

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A low p-n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had therefore been hindered by issues such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. In this work, we present the fabrication and characterisation of a vertical PiN diode using bulk 3C-SiC material. A p-type ohmic contact was obtained on Al implanted regions with a specific contact resistance ~10 -3 Ω.cm 2 . The fabricated PiN diode has a low forward voltage drop of 2.7 V at 1000 A/cm 2 , and the on-off ratio at ±3 V is as high as 10 9 . An ideality factor of 1.83-1.99 was achieved, and a blocking voltage of ~110 V was observed using a singlezone junction termination design.

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confidence: 56%

A study on free-standing 3C-SiC bipolar power diodes

Renz

Pérez‐Tomás

et al. 2021

Applied Physics Letters

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“…I−V curves of the devices constructed from undoped and P-doped IV are shown in Figures A and 8B, respectively. Even though β-SiC is an intrinsic n-type semiconductor, it is obvious that after the film was doped, the n-β-SiC/p-Si heterojunction is significantly improved to show a diode-like rectifying behavior. , A SIMS depth profile study showed that C, P, and Sn secondary ion concentrations dropped significantly at a depth of ca. 0.6−0.8 μm.…”

Section: Resultsmentioning

confidence: 99%

Deposition of Mesoporous Silicon Carbide Thin Films from (Me₃Si)₄Sn: Tin Nanoparticles as in Situ Generated Templates

et al. 2007

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With use of Sn(SiMe3)4 as the precursor, amorphous SiC1+ x thin films with Sn nanoparticles embedded were grown on Si substrates at 923 K by low-pressure chemical vapor deposition. After treatment under hydrogen plasma at 923 K, the Sn nanoparticles in the films were removed by an HF solution and by evaporation at 1423 K. Following the removal of Sn, high-temperature treatments at 1273−1423 K converted the amorphous thin films into mesoporous semiconducting β-SiC thin films with pore sizes 10−100 nm.

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“…The study of Schottky and p-n junction diode behaviour on thin film CVD 3C-SiC dates back to the 1980s [ 83 ]. Much of this early work was conducted on thin films deposited on silicon and 6H-SiC.…”

Section: 3c-sic Device Prototypesmentioning

confidence: 99%

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

Li¹,

Roccaforte

Greco

et al. 2021

Materials

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Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. At present the material remains firmly in the research domain due to numerous technological impediments that hamper its widespread adoption. The most obvious obstacle is defect-free 3C-SiC; presently, 3C-SiC bulk and heteroepitaxial (on-silicon) display high defect densities such as stacking faults and antiphase boundaries. Moreover, heteroepitaxy 3C-SiC-on-silicon means low temperature processing budgets are imposed upon the system (max. temperature limited to ~1400 °C) limiting selective doping realisation. This paper will give a brief overview of some of the scientific aspects associated with 3C-SiC processing technology in addition to focussing on the latest state of the art results. A particular focus will be placed upon key process steps such as Schottky and ohmic contacts, ion implantation and MOS processing including reliability. Finally, the paper will discuss some device prototypes (diodes and MOSFET) and draw conclusions around the prospects for 3C-SiC devices based upon the processing technology presented.

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3C-SiC p-n junction diodes

Cited by 51 publications

References 4 publications

A study on free-standing 3C-SiC bipolar power diodes

A study on free-standing 3C-SiC bipolar power diodes

Deposition of Mesoporous Silicon Carbide Thin Films from (Me₃Si)₄Sn: Tin Nanoparticles as in Situ Generated Templates

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

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3C-SiC p-n junction diodes

Cited by 51 publications

References 4 publications

A study on free-standing 3C-SiC bipolar power diodes

A study on free-standing 3C-SiC bipolar power diodes

Deposition of Mesoporous Silicon Carbide Thin Films from (Me3Si)4Sn: Tin Nanoparticles as in Situ Generated Templates

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

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Deposition of Mesoporous Silicon Carbide Thin Films from (Me₃Si)₄Sn: Tin Nanoparticles as in Situ Generated Templates