3D Interconnect Technology

Knickerbocker, John; Kong, Lay Wai; Niese, Sven; Diebold, Alain C.; Zschech, Ehrenfried

doi:10.1002/9781119963677.ch12

Cited by 6 publications

(4 citation statements)

References 51 publications

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“…The integration of ultra‐low dielectric constant (ULK) materials as insulating materials in copper/ULK on‐chip interconnect stacks is one of the strategies to continuously scale microelectronic devices, to increase performance and to add more functionality. While reducing resistance–capacitance (RC) delay, crosstalk and heat dissipation, the use of ULK materials results in various challenges for the integration process and for the product reliability, especially when the distance between interconnects shrinks below 100 nm . Weak mechanical, thermal, electrical, and adhesion properties of the ULK material make the time dependent dielectric breakdown (TDDB) in on‐chip interconnect stacks, i.e.…”

Section: Introductionmentioning

confidence: 99%

A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time‐Dependent Dielectric Breakdown: Set‐Up and Opportunities

et al. 2014

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The time dependent dielectric breakdown (TDDB) in copper/ultra‐low‐k on‐chip interconnect stacks of integrated circuits has become one of the most critical reliability concerns in recent years. In this paper, a novel experimental in situ microscopy approach using transmission X‐ray microscopy (TXM) and scanning transmission electron microscopy (STEM) is proposed to study TDDB degradation and failure mechanisms. It combines electrical testing and imaging techniques. Low‐dose bright field (BF) STEM inserting a small condenser aperture is chosen to reduce the beam damage of the dielectric material, while the electron spectroscopic imaging technique is used for the chemical analysis to detect the migration path of Cu atoms. This new experimental approach will contribute to an improved understanding of the TDDB effect.

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Section: Introductionmentioning

confidence: 99%

A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time‐Dependent Dielectric Breakdown: Set‐Up and Opportunities

et al. 2014

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“…Three-dimensional (3D) integration is a promising technology for high performance and high circuit density applications, since it reduces global interconnection lengths and increases device density by using high density vertical connections without further shrinking dimensions for transistors and other components [1][2][3]. Figure 1 shows a schematic cross-section of a 3D chip stack.…”

Section: Introductionmentioning

confidence: 99%

Development of vacuum underfill technology for a 3D chip stack

Sakuma

Kohara

Sueoka

et al. 2011

J. Micromech. Microeng.

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We developed a vacuum underfill technology for 3D chip stacks and for flip chips in high performance system integration. We fabricated a 3D prototype chip stack using the vacuum underfill technology to apply the adhesive. The underfill was injected into each 6 µm gaps in a 3-layer chip stack and no voids were detected in acoustic microscopy images. Electrical tests and thermal reliability tests were used to measure the resistance of the vertical interconnections and the impact of the underfill. The results showed there was minimal difference in the average interconnection resistance of the chip stack with and without underfill.

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“…Voids in the range of 100 nm are clearly visible. After identifying the voids, a more detailed (destructive) SEM/FIB studysee Figure 2 -reveals more (smaller) voids [3]. This subsequent study is necessary to determine the root cause of the void formation.…”

mentioning

confidence: 99%

“…Concepts for this navigation and preparation steps will be explained. Visualization of filling defects (voids) in the center of a Cu TSV (nano XCT study, virtual horizontal and vertical cross-sections) and SEM image of a FIB cross-section through this void [2,3].…”

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confidence: 99%

FIB sample preparation for X-ray microscopy and ROI target cross-sectioning

et al. 2016

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X-ray imaging and X-ray computed tomography (XCT) provide non-destructive characterization capabilities on specimens across a range of length scales, observing features with sizes spanning from millimeters over micrometers down to several 10 nanometers. X-ray microscopy-with focusing lensesand nano X-ray tomography are the techniques of choice for two-or three-dimensional inspection of small sized objects and objects' interiors with a resolution well beyond that of light microscopy. These techniques reveal structural characteristics and flaws, such as cracks and pores, or features with different composition. There is a wide variety of applications in materials science and engineering, life science, geoscience and microelectronics [1].

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3D Interconnect Technology

Cited by 6 publications

References 51 publications

A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time‐Dependent Dielectric Breakdown: Set‐Up and Opportunities

A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time‐Dependent Dielectric Breakdown: Set‐Up and Opportunities

Development of vacuum underfill technology for a 3D chip stack

FIB sample preparation for X-ray microscopy and ROI target cross-sectioning

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