57.3: Transparent Silicon‐based Low‐k Dielectric Materials for TFT‐LTPS Displays

Abstract

Silsesquioxane resins are of particular interest for use as insulator materials in flat panel display applications due to their balance of electrical, optical, and mechanical properties. In this study, a series of HSQ and MSQ resins were synthesized and characterized in terms of their structures and thin film properties. These resin systems yielded high quality thin films with high modulus, good adhesion to silicon and glass substrates, high optical transparency (>98 % @ 300 − 800 nm), good planarization properties, excellent gap fill capability, good thermal and chemical stability to various photoresist and ITO etch chemicals necessary for the fabrication of flat panel displays.

27.1: MICC Poly‐Si TFTs for AMLCDs

“…Dow Corning® DD-1100 its film has a low dielectric constant, a good heat resistance, planarization, adhesion and chemical resistance, so that it can be applied to the super high aperture design [14,15]. Figure 5 shows a cross-sectional SEM image of a via hole of a DD-1100 film.…”

Improvement of Hydrogenated Amorphous-Silicon TFT Performances With Low-$k$Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer

“…A spin-on low-k-material (k ∼ 2.8) siloxane-based hydrogen silsesquioxane (HSQ) was first proposed in this letter to replace the conventional nitride passivation layer. High transmittance in the range of visible light, good planarization properties, and good electrical properties make it a more potential candidate for passivation-layer application on BCE a-Si TFTs [8], [9]. In addition, higher process efficiency is another process advantage for using HSQ as a TFT passivation layer.…”

“…Thus, the throughput will be more increased than previous ones. The HSQ film potentially combines the desired features of good adhesion, gap filling, high Young's modulus, low coefficient of thermal expansion, and nonetchback process [8]- [10]. The relative dielectric constant, thickness, and breakdown voltage of the HSQ used in the experiment are 2.8, 5000 A, and 5.0 MV/cm, respectively, whereas those of the conventional SiN x are 7.0, 1000 A, and 9 MV/cm, respectively.…”

Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD

“…Compared with SiN x , low-k materials have high transmittance, low stress and fast process rate. The best low-k film would potentially combine the desired features of good adhesion, gap-filling, high Young's modulus, low coefficient of thermal expansion and a non-etch-back process [6][7][8].…”

“…MSZ, whose dielectric constant is ∼ 2.6, is methyl-silsesquioxane (MSQ)-Thin Solid Films 515 (2006) 1117 -1120 www.elsevier.com/locate/tsf like structure derived from methyl-silsesquioxane. It has high transmittance in the range of visible light, good planarization properties and good electrical properties [8,9]. The thickness of MSZ could be controlled by tuning the speed of spin coater.…”