64 GHz and 100 GHz VCOs in 90 nm CMOS using optimum pumping method

Franca-Neto, L.M.; Bishop, R.; Bloechel, B.

doi:10.1109/isscc.2004.1332785

Cited by 76 publications

(19 citation statements)

References 2 publications

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“…The advantages of complementary metal-oxide semiconductor (CMOS) technology for RF and microwave control functions over GaAs are its low-cost structure and its integration potential of RF, intermediate frequency (IF), and baseband blocks on the same die. Owing to the continuous scaling down of the CMOS technology, RF/microwave building blocks have moved from low gigahertz to higher frequency applications [1], [2].…”

Section: Introductionmentioning

confidence: 99%

A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

Chao

Wang

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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A fully integrated single-pole-double-throw transmit/ receive switch has been designed and fabricated in standard bulk 90-nm complementary metal-oxide semiconductor (CMOS) technology. Traveling wave concept was used to minimize the insertion loss at higher frequency and widen the operating bandwidth. The switch exhibits a measured insertion loss of 2.7 -dB, an input 1-dB compression point (input P 1 dB ) of 15 dBm, and a 29-dB isolation at the center frequency of 77 GHz. The total chip size is only 0.57 0.42 mm 2 including all testing pads. To our knowledge, this is the first CMOS switch demonstrated beyond 50 GHz, and the performances rival those monolithic microwave integrated circuit switches using standard GaAs PHEMTs.Index Terms-Complementary metal-oxide semiconductor (CMOS) integrated circuits, millimeter-wave switches, metal-oxide-semiconductor field-effect transistor (MOSFET) switches.

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Section: Introductionmentioning

confidence: 99%

A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

Chao

Wang

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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“…A pair of coupled thin-film microstrip lines are used as the resonator which has a odd-mode characteristic impedance of 65. 5 and odd-mode attenuation of 560 dB/m. Breaking point A in Fig.…”

Section: Mmic Process and The 90-ghz Vcomentioning

confidence: 99%

“…Due to low device gain and high transmission line loss, the fundamental VCO is not easy to realize at millimeter-wave frequency. A four-stages amplifier to increase the open loop gain [5] and a special layout for cross-coupled pair to improve the loss of the interconnections and the circuit symmetry [6] have been reported.…”

Section: Introductionmentioning

confidence: 99%

A Fundamental 90-GHz CMOS VCO Using New Ring-Coupled Quad

Tsai

Lin

Huang

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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A new circuit topology, named ring-coupled quad for millimeter-wave voltage controlled oscillator (VCO) design, is proposed. The proposed circuit topology provides higher open loop voltage gain than conventional cross-coupled pair. The layout of the proposed ring-coupled quad is fully symmetric without additional interconnection lines. A 90-GHz VCO using 90-nm CMOS process is implemented with this ring-coupled quad. This 90-GHz oscillator demonstrates a 2.5-GHz tuning range and higher than 20 dBm output power. The proposed ring-coupled quad is suitable for the realization of high frequency VCOs.

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“…The 16 phase oscillator, by far the largest analog component in the core, should fit in 1 mm 2 , by analogy to a similar oscillatorHashemi et al [2004]. These chips could be built in a standard CMOS process [Doan et al, 2004;Franca-Neto et al, 2004], which costs about $1000 per 200 mm wafer processed [Clendenin, 2004]. About 1800 chips of this size would fit on a 200 mm wafer, and since the chips are small, the yield should be good (Bluetooth transceiver chips, a similar part, expect yields of 80-90% [Koupal et al, 2003]).…”

Section: The Chipmentioning

confidence: 99%

A scheme for a high‐power, low‐cost transmitter for deep space applications

Scheffer

2005

Radio Science

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Abstract. Applications such as planetary radars and spacecraft communications require transmitters with extremely high effective isotropic radiated power (EIRP). Until now, this has been done by combining a high power microwave source with a large reflective antenna. However, this arrangement has a number of disadvantages. It is costly, since the steerable reflector alone is quite expensive, and for spacecraft communications the need to transmit hurts the receive performance. For planetary radars the utilization is very low since the antenna must be shared with other applications such as radio astronomy or spacecraft communications. This paper describes a potential new way of building such transmitters with lower cost, greater versatility, higher reliability, and potentially higher power. The basic idea is a phased array with a very large number of low power elements, built with mass production techniques that have been optimized for consumer markets. The antennas are built en mass on printed circuit boards, and driven by chips, built with consumer CMOS technology, that adjust the phase of each element. Assembly and maintenance should be comparatively inexpensive since the boards need only be attached to large, flat, unmoving, ground-level infrastructure. Applications to planetary radar and spacecraft communications are examined. Although we would be unlikely to use such a facility in this way, an implication for SETI (Search for Extraterrestrial Intelligence) is that high power beacons are easier to build than had been thought.

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64 GHz and 100 GHz VCOs in 90 nm CMOS using optimum pumping method

Cited by 76 publications

References 2 publications

A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

A Fundamental 90-GHz CMOS VCO Using New Ring-Coupled Quad

A scheme for a high‐power, low‐cost transmitter for deep space applications

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