800V lateral IGBT in bulk Si for low power compact SMPS applications

Trajković, T.; Udugampola, N.; Pathirana, V.; Camuso, Gianluca; Udrea, F.; Amaratunga, G.A.J.

doi:10.1109/ispsd.2013.6694430

Cited by 20 publications

(10 citation statements)

References 6 publications

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“…enhanced current density capability when compared to equivalent lateral MOSFETs. A new lateral 800 V rated bulk Si LIGBT has been recently developed by Camsemi and used in large volume products for low-power switched-mode power supply (SMPS) applications [19]. The cross section of this device, which has been used in the final section of our BGN analysis, is shown in Fig.…”

Section: E Lateral Igbtmentioning

confidence: 99%

Effect of Bandgap Narrowing on Performance of Modern Power Devices

Camuso

Napoli

Pathirana

et al. 2013

IEEE Trans. Electron Devices

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The effect of the bandgap narrowing (BGN) on performance of power devices is investigated in detail in this paper. The analysis reveals that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance. This is due to the modified injection efficiency under high-level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction, an analytical model for this phenomenon is developed. BGN model tuning has been proved to be essential in accurately predicting the performance of a lateral insulated-gate bipolar transistor (IGBT). Other devices such as p-i-n diodes or punch-through IGBTs are significantly affected by the BGN, while others, such as field-stop IGBTs or power MOSFETs, are only marginally affected.Index Terms-Bandgap narrowing, insulated-gate bipolar transistor (IGBT), power devices, high voltage.

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Section: E Lateral Igbtmentioning

confidence: 99%

Effect of Bandgap Narrowing on Performance of Modern Power Devices

Camuso

Napoli

Pathirana

et al. 2013

IEEE Trans. Electron Devices

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“…Another approach is to use a Schottky contact in front of the collector P + to lower the collector injection [6]. Ref [7] reports lowering the collector P+ doping and using a floating N+ in front of collector P+ to lower the switching losses. This structure is based on the idea of creating a physical barrier for hole injection and is helped by the Auger recombination process.…”

Section: Introductionmentioning

confidence: 99%

Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode

Pathirana

Udugampola

Trajković

et al. 2018

IEEE Electron Device Lett.

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“…The advantage of high current density, low power losses and reduced device footprint has led to an increased attention towards these devices in high voltage low power applications [3]. To match the level of advancement associated with the chip technology and enable the full exploitation of its potential at application level, the assembly exercise targets the structural and functional integration of design elements to yield optimised electrical and thermal management of the chip.…”

Section: Introductionmentioning

confidence: 99%

“…2(b). The LIGBT possesses a new design feature which is a floating N + layer next to collector P + [3]. This feature allows layout based tuning and minimisation of device losses based on the application.…”

Section: Introductionmentioning

confidence: 99%

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Chip-on-board assembly of 800V Si L-IGBTs for high performance ultra-compact LED drivers

Aliyu

Mouawad

Castellazzi

et al. 2017

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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Abstract-This paper presents a novel chip on board assembly design for an integrated power switch, based on high power density 800V silicon lateral insulated-gate bipolar transistor (Si LIGBT) technology. LIGBTs offer much higher current densities (5-10X), significantly lower leakage currents, and lower parasitic device capacitances and, gate charge compared to conventional vertical MOSFETs commonly used in LED drivers. The higher voltage ratings offered (up to 1kV), the development of high voltage interconnection between parallel IGBTs, self-isolated nature and absence of termination region unlike in a vertical MOSFET makes these devices ideal for ultracompact, low bill of materials (BOM) count LED drives. Chip onboard LIGBTs also offer significant advantages over MOSFETs due to high ambient temperatures seen on most of the LED lamps as the LIGBTs on-state losses increase only marginally with temperature. The design is based on a built-in reliability approach which focuses on a compact LED driver as a case-study of a cost-sensitive large volume production item.

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800V lateral IGBT in bulk Si for low power compact SMPS applications

Cited by 20 publications

References 6 publications

Effect of Bandgap Narrowing on Performance of Modern Power Devices

Effect of Bandgap Narrowing on Performance of Modern Power Devices

Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode

Chip-on-board assembly of 800V Si L-IGBTs for high performance ultra-compact LED drivers

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