871nm Ultra-Narrow-Linewidth Laser for Yb+ Clock

Lai, Yi Hsuan; Love, Stuart; Savchenkov, Anatoliy A.; Eliyahu, Danny; Moss, Robert; Maleki, Lute

doi:10.1364/cleo_si.2021.sf2p.3

Cited by 4 publications

(3 citation statements)

References 12 publications

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“…Narrow-linewidth, self-injection-locked lasers can be used for the development of the quantum communication systems [245,246]. These lasers also allow to enhance characteristics of various laser-based devices, such as laser gyroscopes [247][248][249], LiDAR [94,250], sensors [111,[251][252][253], and atomic clocks [254]. Recently, it has been proposed a novel method to generate spectrally pure terahertz signals by beating two selfinjection-locked lasers [255,256].…”

Section: Applications and Outlookmentioning

confidence: 99%

Recent advances in laser self-injection locking to high-Q microresonators

et al. 2023

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The stabilization and manipulation of laser frequency by means of an external cavity are nearly ubiquitously used in fundamental research and laser applications. While most of the laser light transmits through the cavity, in the presence of some back-scattered light from the cavity to the laser, the self-injection locking effect can take place, which locks the laser emission frequency to the cavity mode of similar frequency. The self-injection locking leads to dramatic reduction of laser linewidth and noise. Using this approach, a common semiconductor laser locked to an ultrahigh-Q microresonator can obtain sub-Hertz linewidth, on par with state-of-the-art fiber lasers. Therefore it paves the way to manufacture high-performance semiconductor lasers with reduced footprint and cost. Moreover, with high laser power, the optical nonlinearity of the microresonator drastically changes the laser dynamics, offering routes for simultaneous pulse and frequency comb generation in the same microresonator. Particularly, integrated photonics technology, enabling components fabricated via semiconductor CMOS process, has brought increasing and extending interest to laser manufacturing using this method. In this article, we present a comprehensive tutorial on analytical and numerical methods of laser self-injection locking, as well a review of most recent theoretical and experimental achievements.

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Section: Applications and Outlookmentioning

confidence: 99%

Recent advances in laser self-injection locking to high-Q microresonators

et al. 2023

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“…Wavelength tunable semiconductor lasers have a wide range of important applications, such as fiber-optic communications [74,75], optical sensing [61,76] and atomic clocks [77][78][79]. They are also considered as an optical power/signal supplying source, which is one of the most fundamental elements in optical wavelength division multiplexing (WDM) communication systems [80][81][82][83].…”

Section: The Application Of Silicon-based Soasmentioning

confidence: 99%

The Progress and Trend of Heterogeneous Integration Silicon/III-V Semiconductor Optical Amplifiers

et al. 2023

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Silicon photonics is a revolutionary technology in the integrated photonics field which has experienced rapid development over the past several decades. High-quality III-V semiconductor components on Si platforms have shown their great potential to realize on-chip light-emitting sources for Si photonics with low-cost and high-density integration. In this review, we will focus on semiconductor optical amplifiers (SOAs), which have received considerable interest in diverse photonic applications. SOAs have demonstrated high performance in various on-chip optical applications through different integration technologies on Si substrates. Moreover, SOAs are also considered as promising candidates for future light sources in the wavelength tunable laser, which is one of the key suitable components in coherent optical devices. Understanding the development and trends of heterogeneous integration Silicon/III-V SOA will help researchers to come up with effective strategies to combat the emerging challenges in this family of devices, progressing towards next-generation applications.

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“…In this work, we demonstrate an integrated photonic platform based on Vernier dualmicrocombs that overcomes some of the fundamental challenges of previous microcomb-based systems for the realization of chip-scale optical clocks. Specifically, by pairing a main octavespanning ∼THz-microcomb with a secondary broadband ∼THz Vernier microcomb, both on a silicon nitride (SiN) platform, we successfully frequency divide an ultranarrow-linewidth CW laser at 871 nm [17] to an RF clock output at ∼235 MHz. This laser is designed for frequencydoubling to within a few GHz of the Ytterbium ion ( 171 Yb + ) "clock transition" at 435.5 nm that is expected to support better frequency stability than most thermal atomic references.…”

Section: Optical Referencementioning

confidence: 99%

Vernier Microcombs for Integrated Optical Atomic Clocks

Wu,

OMalley,

Fatema

et al. 2023

Preprint

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CMOS-compatible Kerr microcombs have drawn substantial interest as mass-manufacturable, compact alternatives to bulk frequency combs. This could enable deployment of many comb-reliant applications previously confined to laboratories. Particularly enticing is the prospect of microcombs performing optical frequency division in compact optical atomic clocks. Unfortunately, it is difficult to meet the self-referencing requirement of microcombs in these systems due to the ∼THz repetition rates typically required for octave-spanning comb generation. Additionally, it is challenging to spectrally engineer a microcomb system to align a comb mode with an atomic clock transition with sufficient signal-to-noise ratio. Here, we adopt a Vernier dual-microcomb scheme for optical frequency division of a stabilized ultranarrow-linewidth continuous-wave laser at 871 nm to a ∼235 MHz output frequency. In addition to enabling measurement of the comb repetition rates, this scheme brings the freedom to pick comb lines from either or both of the combs. We exploit this flexibility to shift an ultra-high frequency (∼100 GHz) carrier-envelope offset beat down to frequencies where detection is possible and to place a comb line close to the 871 nm laser - tuned so that if frequency-doubled it would fall close to the clock transition in 171Yb+. Moreover, we introduce a novel scheme which suppresses frequency noise arising from interferometric phase fluctuations in our dual-comb system and reduces the frequency instability down to our measurement limit. Our dual-comb system can potentially combine with an integrated ion trap toward future chip-scale optical atomic clocks.

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871nm Ultra-Narrow-Linewidth Laser for Yb+ Clock

Abstract: We demonstrated a miniaturized 871 nm semiconductor laser optically injection locked to a whisper-gallery-mode resonator demonstrating Hertz-level instanta-neous linewidth for Yb+ clock applications. The laser linewidth and short term drift are suppressed by over 104.

Cited by 4 publications

References 12 publications

Recent advances in laser self-injection locking to high-Q microresonators

Recent advances in laser self-injection locking to high-Q microresonators

The Progress and Trend of Heterogeneous Integration Silicon/III-V Semiconductor Optical Amplifiers

Vernier Microcombs for Integrated Optical Atomic Clocks

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