Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169)
DOI: 10.1109/cicc.2001.929758
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A 0.10 μm CMOS, 1.2 V, 2 GHz phase-locked loop with gain compensation VCO

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Cited by 9 publications
(9 citation statements)
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“…If low-devices were available in the process technology, using one for the follower would further improve the gain linearity at high VCO frequencies. The -converter in [9] achieves a linear gain for the entire range of , slightly larger than the range of this proposed -converter. However, the -converter in [9] suffers from high power-supply noise sensitivity due to the coupling of to both ground and .…”
Section: A Vco Designmentioning
confidence: 94%
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“…If low-devices were available in the process technology, using one for the follower would further improve the gain linearity at high VCO frequencies. The -converter in [9] achieves a linear gain for the entire range of , slightly larger than the range of this proposed -converter. However, the -converter in [9] suffers from high power-supply noise sensitivity due to the coupling of to both ground and .…”
Section: A Vco Designmentioning
confidence: 94%
“…The -converter in [9] achieves a linear gain for the entire range of , slightly larger than the range of this proposed -converter. However, the -converter in [9] suffers from high power-supply noise sensitivity due to the coupling of to both ground and . The gain linearity improvement technique proposed in this paper resolves the problem by coupling only to the ground reference.…”
Section: A Vco Designmentioning
confidence: 94%
“…Recently, circuit design techniques to compensate the gate tunneling leakage of MOS capacitor in PLL have been reported in nanoscale CMOS processes [3]- [7]. The MOS capacitor realized with thick oxide has a less gate tunneling leakage [3]. The capacitor with multimetal structure was used to avoid the gate tunneling leakage [4].…”
Section: Introductionmentioning
confidence: 99%
“…The MOS capacitor with a larger capacitance per area was often used in PLL to reduce the silicon cost, but the PLL performance is degraded due to the large gate tunneling leakage. Recently, circuit design techniques to compensate the gate tunneling leakage of MOS capacitor in PLL have been reported in nanoscale CMOS processes [3]- [7]. The MOS capacitor realized with thick oxide has a less gate tunneling leakage [3].…”
Section: Introductionmentioning
confidence: 99%
“…The digital switching noise coupled through power supply and substrate induces considerable noise into noise-sensitive analog circuits [1], [3]- [7]. Many analog approaches are proposed to improve the jitter performance of PLLs, such as choosing a narrow bandwidth or using a low-gain voltage-controlled oscillator (VCO) [5].…”
Section: Introductionmentioning
confidence: 99%