A 0.55-V, 28-ppm/°C, 83-nW CMOS Sub-BGR With UltraLow Power Curvature Compensation

Liu, Shubin; Mu, Junchao; Zhu, Zhangming

doi:10.1109/tcsi.2017.2711923

Cited by 35 publications

(7 citation statements)

References 23 publications

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“…The currents through M b and M at follow the forms of Equations (6) and 7, with the only differences being the various process-dependent parameters for the thick-oxide device, M at ,…”

Section: Temperature-independent Voltage Reference Cellmentioning

confidence: 99%

“…As newer CMOS technology nodes are providing lower threshold voltages and reduced supply voltages, the main emphasis of recent designs has been to generate a low reference voltage (especially less than 1 V) using a low supply voltage. Many good designs have been developed that provide these sub-1V reference voltages using very low power (e.g., [1][2][3][4][5][6]).…”

Section: Introductionmentioning

confidence: 99%

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A Low-Power Voltage Reference Cell with a 1.5 V Output

Navidi

Graham

2018

JLPEA

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A low-power voltage reference cell for system-on-a-chip applications is presented in this paper. The proposed cell uses a combination of standard transistors and thick-oxide transistors to generate a voltage above 1 V. A design procedure is also presented for minimizing the temperature coefficient (TC) of the reference voltage. This circuit was fabricated in a standard 0.35 µm complementary metal-oxide-semiconductor (CMOS) process. It generates a 1.52 V output with a TC of 42 ppm/ • C from −70 • C to 85 • C while consuming only 1.11 µW.

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“…The currents through M b and M at follow the forms of Equations (6) and 7, with the only differences being the various process-dependent parameters for the thick-oxide device, M at ,…”

Section: Temperature-independent Voltage Reference Cellmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Low-Power Voltage Reference Cell with a 1.5 V Output

Navidi

Graham

2018

JLPEA

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“…Band-gap reference circuits are widely used as basic circuit modules in analog circuits and various mixed-signal circuits [1][2][3] , such as power management chips, low dropout linear regulators (LDO), DC-DC converter chips, etc., to provide high-precision and high-stability reference voltage or bias current for each module [4] with the development of integrated circuits and the increasing demand for portable electronics. With the development of integrated circuits and the increasing demand for portable electronics, the performance of bandgap reference sources is becoming more and more demanding, and the traditional bandgap reference circuits gradually fail to meet the requirements of high-precision applications [5][6][7][8] , so the design of bandgap reference sources with high power supply rejection ratio (PSRR) is a hot topic of research nowadays.…”

Section: Introductionmentioning

confidence: 99%

First-order Bandgap Reference Source Design with High Power Supply Rejection Ratio

Kang

2022

J. Phys.: Conf. Ser.

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In this paper, a first-order bandgap reference source with a high power supply rejection ratio (PSRR) is designed. To obtain a low-temperature coefficient, a first-order bandgap temperature coefficient compensation method is used by adjusting the resistor resistance of the positive and negative temperature coefficients, and the gate-source voltage of the current mirror transistor is kept constant to increase the PSRR value in the low-frequency band. A self-start circuit is added to make the circuit start up quickly out of the simple bias point. The simulation results show that the bandgap reference voltage source has a constant 1.25V reference voltage with a temperature coefficient of 8.55ppm/°C in the temperature range of -40 to 125°C. The circuit is simulated using Cadence software. The circuit can be applied to OLED constant current source circuits and power management circuits.

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“…The voltages V PTAT and V CTAT are generally obtained by voltage drops of either forward‐biased PN junction diode, 11–13 base‐emitter junction voltages of the BJTs, 14–29 or gate‐to‐source voltages of subthreshold MOS transistors 30–43 . The first‐order temperature‐compensated voltage reference circuits have been reported in the literature, which are formed by using diodes, BJTs, MOS transistors, or by combination of these devices 11,12,14–17,26,28–41 .…”

Section: Introductionmentioning

confidence: 99%

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Thakur

Pandey

Kumar

2020

Circuit Theory & Apps

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Summary A high‐order curvature‐compensated subthreshold voltage reference is proposed in this paper. The proposed curvature‐compensated voltage reference consists of two supply‐independent first‐order voltage references and a curvature compensation circuit. The supply‐independent first‐order voltage reference uses a negative feedback loop which improves the line sensitivity and eliminates the demand of operational amplifier, whereas the curvature compensation circuit provides high‐order temperature‐compensated output reference voltage. The proposed curvature‐compensated voltage reference provides an output reference voltage of 118.54 mV with a temperature coefficient of 21.5 ppm/°C over a wide temperature range of −60°C to 120°C. The power supply rejection ratio and line sensitivity are observed as −68.64 dB (for the frequency range of 1 Hz to 100 Hz) and 0.035%/V (for the supply voltage varies from 0.85 V to 2.5 V), respectively. The values of output noise at the frequencies of 1 kHz and 10 kHz without using any capacitive filter are obtained as 179.13 nV/ √ Hz and 123.87 nV/ √ Hz, respectively.

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A 0.55-V, 28-ppm/°C, 83-nW CMOS Sub-BGR With UltraLow Power Curvature Compensation

Cited by 35 publications

References 23 publications

A Low-Power Voltage Reference Cell with a 1.5 V Output

A Low-Power Voltage Reference Cell with a 1.5 V Output

First-order Bandgap Reference Source Design with High Power Supply Rejection Ratio

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

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