A 108&amp;#x2013;112 GHz 4&amp;#x00D7;4 wafer-scale phased array transmitter with high-efficiency on-chip antennas

Shin, Woorim; Inac, Ozgur; Ou, Yu-Chin; Ku, Bon‐Hyun; Rebeiz, Gabriel M.

doi:10.1109/rfic.2012.6242263

Cited by 16 publications

(15 citation statements)

References 10 publications

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“…This has been demonstrated at W-band using a 9-element array (6x6 mm 2 ) [7], and at 114 GHz using a 16-element array (6.Sx6.S Imn 2 ) [8]. However, true-wafer scale capabilities will only occur if this concept is taken to the reticle level (22x22 nun 2 ), which will allow for a large number of elements on a single chip, and pave the way for tiling of the reticles together to build a wafer-scale array.…”

Section: Introductionmentioning

confidence: 99%

A 60 GHz 64-element wafer-scale phased-array with full-reticle design

Zihir

Gurbuz

Kar‐Roy³

et al. 2015

2015 IEEE MTT-S International Microwave Symposium

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This paper presents the first large-scale wafer-scale phased-array at 60 GHz with 64-elements spaced )J2 apart and occupying a full reticle area of 2.2x2.2 cm 2 • The transmit array includes high-efficiency on-wafer antennas, 3-bits amplitude and S-bits phase control on each element, and a highly redundant RF distribution network for improved yield. It also includes redundant SPI control and power strips, also for improved yield.The 64-element array results in a half-power beam width of 12.5°in the E-and H-planes, a directivity of 23 dB and scans to +/-55° in the E-and H-planes with near-ideal patterns and a cross-polarization level of <-25 dB. The measured EIRP is 38 dBm at 66 GHz, but this is currently being redone for improved accuracy. To our knowledge, this is the largest single-chip phased array ever developed and paves the way to mm-wave large-scale (1000+ elements) phased-array systems.

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Section: Introductionmentioning

confidence: 99%

A 60 GHz 64-element wafer-scale phased-array with full-reticle design

Zihir

Gurbuz

Kar‐Roy³

et al. 2015

2015 IEEE MTT-S International Microwave Symposium

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“…One radical solution, proposed by UCSD, is to integrate everything required for a phased array on a single chip, not only the electronics, but also the high-efficiency antennas leading to a wafer-scale implementation [4]. Also, the entire phased array should be integrated on a single piece of silicon so that no mm-wave interconnect occurs between different substrates.…”

Section: Introductionmentioning

confidence: 99%

“…This paper will present some of these ICs for mm-wave radar and communication systems [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Millimeter-wave SiGe RFICs for large-scale phased-arrays

Rebeiz

2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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This talk will present our latest work on silicon RFICs for phased-array applications with emphasis on very large chips with built-in-self-test capabilities, and for wafer-scale integration. SiGe is shown to be ideal for mmwave applications due to its high temperature performance (automotive radars, base-stations, defense systems, etc.) and lower power consumption. These chips drastically reduce the cost of microwave and millimeter-wave phased arrays by combining many elements on the same chip, together with digital control. The phased-array chips also allow a much easier packaging scheme using either a multi-layer PCB or wafer-level packages. Examples from 30 GHz to 140 GHz will be presented, together with their system-level performance (imaging radars, packaging, antenna patterns, etc.)

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“…The high levels of integration and availability of both highfrequency bipolar devices and low-power digital CMOS make SiGe BiCMOS technologies well-suited for this task. Recently, various phased arrays operating at Wband have been demonstrated in SiGe [4][5][6][7]. These previously reported ICs have not integrated complete transmitter and receiver functions on the same die and do not support two antenna polarizations.…”

Section: Introductionmentioning

confidence: 99%

A fully-integrated dual-polarization 16-element W-band phased-array transceiver in SiGe BiCMOS

Valdes‐Garcia

Natarajan

Liu

et al. 2013

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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This paper presents a multi-function, dualpolarization phased array transceiver supporting both radar and communication applications at W-band. 32 receive elements and 16 transmit elements with dual outputs are integrated to support 16 dual polarized antennas in a package. The IC further includes two independent 16:1 combining networks, two receiver downconversion chains, an up-conversion chain, a 40GHz PLL, an 80GHz frequency doubler, extensive digital control circuitry, and on-chip IF/LO combining/distribution circuitry to enable scalability to arrays at the board level. The fully-integrated transceiver is fabricated in the IBM SiGe BiCMOS 0.13um process, occupies an area of 6.6X6.7mm 2 , and operates from 2.7V (analog/RF) and 1.5V (digital) supplies. Multiple operating modes are supported including the simultaneous reception of two polarizations with a 10GHz IF output, transmission in either polarization from an IF input, or single-polarization transmission/reception from/to I&Q base-band signals (2.5W RX, 2.9W TX). Measurement results show 8dB receiver NF and 2dBm transmitter output power per element at 94GHz in both polarizations.

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A 108–112 GHz 4×4 wafer-scale phased array transmitter with high-efficiency on-chip antennas

Cited by 16 publications

References 10 publications

A 60 GHz 64-element wafer-scale phased-array with full-reticle design

A 60 GHz 64-element wafer-scale phased-array with full-reticle design

Millimeter-wave SiGe RFICs for large-scale phased-arrays

A fully-integrated dual-polarization 16-element W-band phased-array transceiver in SiGe BiCMOS

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