A 110 GHz look-up table based InP HEMTs large-signal model including impact ionization effects

Orzati, A.; Schreurs, Dominique; Pergola, L.; Benedickter, H.; Homan, O.J.; Bächtold, W.

doi:10.1109/iciprm.2001.929088

Cited by 4 publications

(1 citation statement)

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“…From this point of view, the intrinsic device model should guarantee physical frequency extrapolations of differential parameters. Classic equivalent circuit models [8][9][10][11][12] tend to respect this constraint, and therefore are a potentially good candidate for accurate predictions at extremely high frequencies.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear modeling of InP devices for W-band applications

Resca¹,

Giacomo²,

Raffo³

et al. 2009

Int. j. microw. wirel. technol.

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A recently proposed technique for the distributed modeling of extrinsic parasitic effects in electron devices is used for the very first time in conjunction with a lumped equivalent circuit model for the intrinsic device.\ud \ud Nonlinear modeling of 0.1 μm InP HEMTs for W-band applications is considered here, leading to extremely accurate predictions of harmonic distortion and power added efficiency at the fundamental frequencies of 27 and 94 GHz.\ud \ud The distributed parasitic network is identified through accurate electromagnetic simulations up to the upper frequency limit of the millimeter-wave band (300 GHz), while standard pulsed I/V and S-parameter measurements up to 67 GHz are used for the identification of the intrinsic device model

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