A 112 Gb/s PAM4 Silicon Photonics Transmitter With Microring Modulator and CMOS Driver

Li, Hao; Casper, Bryan; Balamurugan, Ganesh; Sakib, Meer; Sun, Jie; Driscoll, Jeffery; Kumar, Ranjeet; Jayatilleka, Hasitha; Rong, Haisheng; Jaussi, James

doi:10.1109/jlt.2019.2938731

Cited by 76 publications

(48 citation statements)

References 8 publications

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“…In this case, a 2 V swing is able to provide sufficient modulation of the microring modulator, which indicates significant improvement in power consumption. A 112 Gb/s PAM4 transmitter with the silicon photonics microring modulator and a CMOS driver are also reported for 400G Ethernet applications [77].…”

Section: Carrier-depletion Microring Modulatorsmentioning

confidence: 99%

“…A CMOS silicon carrier-injection microring modulator transmitter at a data rate of 9 Gb/s has achieved an energy efficiency of 473 fJ/bit [71] which is almost 100× worse than the energy efficiency of 5 fJ/bit counting the device only [70]. Similarly, a CMOS silicon carrier-depletion microring modulator transmitter at a data rate of 112 Gb/s has achieved an energy efficiency of 6 pJ/bit [77] which is also around 100× worse than the energy efficiency of 65 fJ/bit counting the device only [76]. Therefore, reducing the power consumption from electronics is also crucial to improve the total energy efficiency.…”

Section: Hybrid Electro-optic Modulatorsmentioning

confidence: 99%

“…Therefore, reducing the power consumption from electronics is also crucial to improve the total energy efficiency. Certainly, a modulator with higher modulation efficiency requires lower driving voltage which saves the total power consumption of an optical transmitter [71,77]. The device insertion loss is also an important metric for calculating the energy efficiency of a full optical link.…”

Section: Hybrid Electro-optic Modulatorsmentioning

confidence: 99%

See 2 more Smart Citations

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Wang¹,

Huang²,

Chen³

et al. 2019

PIER

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Datacenters become an important part of technical infrastructure. The Datacom traffic grows exponentially to satisfy the demands in IT services, storage, communications, and networking to the growing number of networked devices and users. High bandwidth and energy efficient optical interconnects are critical to improve overall productivity and efficiency in data centers. Mega-data centers are expected to address the power consumption and the cost in which optical interconnects contribute quite a large part. Silicon photonics is a promising platform to offer savings in power and potential increase in bandwidth for Datacom. Several modulation techniques are developed in silicon photonics to reduce the optical mode volume or enhance the light matter effect to further improve the modulation efficiency. Many other materials such as III-V and LiNbO 3 are integrated on silicon photonics to maximize the optical link performance. This paper reviews several modulation techniques for Datacom, from vertical-cavity surface-emitting laser (VCSEL) direct modulation to silicon photonics modulators then to hybrid silicon modulators.

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Section: Carrier-depletion Microring Modulatorsmentioning

confidence: 99%

Section: Hybrid Electro-optic Modulatorsmentioning

confidence: 99%

Section: Hybrid Electro-optic Modulatorsmentioning

confidence: 99%

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Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Wang¹,

Huang²,

Chen³

et al. 2019

PIER

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“…[3] At the transmitter (TX) side, high quality factor MRR modulators driven by CMOS transmitters imprint independent highspeed data streams on specified wavelengths from the laser source. [4][5][6][7] These MRR modulators can support very high data rates, with a recent depletion-mode device achieving 128 Gb s −1 four-level pulse amplitude modulation (PAM4) operation. [8] The dual process occurs at the receiver (RX) side with MRR filters utilized to drop a specific wavelength at a given channel for photodiodes to convert the optical power to current for detection by CMOS front-end circuits.…”

Section: Introductionmentioning

confidence: 99%

“…[14] Recently, PAM4 CMOS driver and receiver front-ends have been used with MRR devices to achieve data rates in excess of 100 Gb s −1 . [6,15] Moreover, PAM4 has become a common modulation scheme in Ethernet standards for 200 Gb s −1 and above. [2] While combining MRR devices, APDs and PAM4 modulation is an attractive approach to achieve extremely high data rates, there are key issues that deserve analysis.…”

Section: Introductionmentioning

confidence: 99%

Design Considerations for Energy Efficient DWDM PAM4 Transceivers Employing Avalanche Photodiodes

Kumar

Huang

Zeng

et al. 2020

Laser & Photonics Reviews

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An effective approach to increase per‐fiber bandwidth is to combine per‐wavelength four‐level pulse amplitude modulation (PAM4) with dense wavelength division multiplexing (DWDM). Silicon photonic transceivers based on microring resonator modulators and drop filters can allow for an efficient realization of this. Utilizing avalanche photodiodes (APDs) in the receiver front‐ends of these transceivers can significantly improve sensitivity, allowing for reduced source laser power and overall improved power efficiency. This paper analyzes the optical‐modulation amplitude (OMA) sensitivity of these APD‐based PAM4 receivers in a silicon photonic DWDM link. A comprehensive link budget is considered that takes into account various system losses and relevant noise sources. Modeling with a developed APD that has a maximum 230 GHz gain‐bandwidth product predicts sensitivity improvements at 32 to 64 Gb s−1 PAM4 ranging from 9.8 to 12 dB relative to a conventional p‐i‐n photodiode. Scaling the APD gain‐bandwidth to 310 GHz allows support of 112 Gb s−1 with −13.2 dBm OMA sensitivity at a BER of 2.4×10−4 with an APD gain of 10. Utilizing the presented architecture, link budget analysis predicts a 9.5x reduction in laser power with APDs and that 38 mW source laser optical power can support a four‐channel DWDM link operating at an aggregate 448 Gb s−1 data rate.

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III–V on Silicon Integrated Optical Devices

Takeda

2024

Handbook of Radio and Optical Networks Convergence

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A 112 Gb/s PAM4 Silicon Photonics Transmitter With Microring Modulator and CMOS Driver

Cited by 76 publications

References 8 publications

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Design Considerations for Energy Efficient DWDM PAM4 Transceivers Employing Avalanche Photodiodes

III–V on Silicon Integrated Optical Devices

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