ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005.
DOI: 10.1109/isscc.2005.1493969
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A 3D integration scheme utilizing wireless interconnections for implementing hyper brains

Abstract: In order to break Moore's law by 3D integration, innovative solutions for inter-and intra-chip interconnections have to be developed. Inter-chip interconnection technologies using via-holes have been developed however their associated fabrication cost and yield are still unacceptable. To overcome these problems, wireless interconnects using capacitive coupling of small pads [1] or inductive coupling of on-chip spiral inductors [2] are proposed. With the former technique, since a pair of pads formed on differen… Show more

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Cited by 31 publications
(14 citation statements)
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“…The quality factor of the antenna is improved but the bandwidth decreases with decreasing thickness of the Si substrate. The received peak-to-peak voltage does not depend on the number of stacked chips when the resistivity of the Si substrate is 2.29 kΩ cm but it decreases with increasing numbers of chips when the standard Si substrate (10 Ω cm) is used, as shown in Figure 15.15 (c) [31]. The radiation efficiency and the transmission coefficient of the on-chip antenna increase with increasing resistivity and with increasing thickness of the Si substrate, as shown in Figure 15.14.…”
Section: Near-field @ Airmentioning
confidence: 99%
See 1 more Smart Citation
“…The quality factor of the antenna is improved but the bandwidth decreases with decreasing thickness of the Si substrate. The received peak-to-peak voltage does not depend on the number of stacked chips when the resistivity of the Si substrate is 2.29 kΩ cm but it decreases with increasing numbers of chips when the standard Si substrate (10 Ω cm) is used, as shown in Figure 15.15 (c) [31]. The radiation efficiency and the transmission coefficient of the on-chip antenna increase with increasing resistivity and with increasing thickness of the Si substrate, as shown in Figure 15.14.…”
Section: Near-field @ Airmentioning
confidence: 99%
“…A 3D wireless LSI stacked system has been proposed, as shown in Figure 15.5 [30,31]. Local wireless interconnects (LWIs) have been developed between adjacent chips using inductive coupling and capacitive coupling.…”
Section: Figure Of Merit For Wireless Interconnectsmentioning
confidence: 99%
“…Wafer-level integration (WLI) can be performed in two ways: entire wafers can be bonded together before dicing (an approach herein after termed 3D-W2W) or KGDs are bonded on top of a host wafer containing other KGD sites, termed (3D-D2W) [17]. Some other possibilities not considered here include capacitive [18], [19] or inductive [20] links for wireless communication between chips [21].…”
Section: -D Integration Technologiesmentioning
confidence: 99%
“…3D stacking technology is very promising as a future technology because of its many benefits, such as its high performance, low power, smaller footprint, and enabling of heterogeneous technology integration [RTI 2004[RTI -2007Iwata et al 2005;Topol et al 2005;ISSCC Forum 2007]. Such benefits of the 3D stacking technology will be useful for those computer systems in which there are multiple connection paths between each chip.…”
Section: Introductionmentioning
confidence: 99%