This paper describes a 6.4Gb/s data lane circuit in 65nm CMOS process. The data lane circuit consists of an offset cancellation continuous time linear equalizer and a half-rate digital CDR; the CDR bandwidth is programmable by using a digital FIR filter. A common-mode level shift function is implemented in order to use NMOS input CML circuit. The design can compensate over 8 dB channel loss with offsetcalibrated and low noise. The area for one data lane is 0.045 and power consumption is 24.5mW for 1.2V supply.