A 5V-only 16K EEPROM utilizing oxynitride dielectrics and EPROM redundancy

At present, the main products of highperformance EEPROMs which can beaccommodated in recent high-speed microcomputers are 16 K bit devices which require two supplies (Vee and Vpp). In this paper, a next generation EEPROM which can provide high performance and functionality such as: (1) high density (64 K bit); (2) byte erasable; and (3) internal programming supply is described. The memory device used is a reliable n-channel Si gate MNOS device .To realize a high density of 64 K, the miniaturization of the MNOS device has been examined, and the scaling law is proposed. Also, to accomplish a reli bl byte erasing, a timing is set up for a high-voltage switching circuit whose current supply capability is designed to have a sufficient margin so that the rate of high-voltage application into the memory array is determined approximately by the voltage multiplication rate of the multiplier circuit. The generation of high voltage is done by charge pumping method , and a z ner diode is used for th stabilization .

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“…9(a), into which flows a large current. [3]. Therefore, a high-voltage swtiching circuit is needed which can decode without current flow.…”

Section: High-voltage Switching Circuitmentioning

confidence: 99%

A byte erasable 5V‐only 64 kbit EEPROM

Yatsuda

Hagiwara

Minami

et al. 1984

Electron. Comm. Jpn. Pt. I

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“…These films exhibit outstanding properties in diffusion barrier of impurities, high-temperature oxidation resistance, great durability in plasma and ion processes, and radiation hardness (3,4,5,6]. Various applications of these films have been reported including the selective oxidation mask [7], the tunneling insulator [8,9], the avalanche barrier of E 2 PROM [10], the dynamic RAM capacitor [11], the self-aligned contact [12] and the gate dielectric for submicron MOS devices [1, 13 14) As thermal nitridation Si requires a temperature higher than 1000 0 C. which will not be compatible with VLSI process to be used in the near future, the authors first reported a plasma technique for lowering the nitridation temperature [15]. Then, a variety of plasma nitridation reactors were developed [16,17,18].…”

Section: Introductionmentioning

confidence: 99%

Plasma Enhancement in Direct Nitridation of Silicon and Silicon-Dioxide

1984

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Effects of plasma on direct nitridation of Si and Si0 2 have been investigated. The reactor consisted of a quartz tube, SiC-coated carbonsusceptors and an RF-induction coil. The electrical probe technique was used to detect floating potential of the susceptor having Si substrates. The voltage distribution between the susceptor and plasma is influenced by nitridation ambient, pressure, reactor geometry and RF power. The predominant species in NH 3 plasma is NH radicals which are thought to be negatively charged in an ion sheath formed around the susceptor. The Cabrera-Mott model has been successfully applied to analyze the nitridation mechanism. Plasma enhancement is mainly caused by activation of characteristic velocity of nitridation species rather than by an increase in the electric field appearing in a film. Enhancement due to fluorine incorporation is also explained with the model. Bombardment of ionic species causes sputtering and deposition resulting in damage, contamination and thickness nonuniformity. Optimizing the plasma conditions, decrease in nitridation temperature, increase in growth rate, and improvements in film composition and interfacial structure have been obtained. It has been found that the further nitridation proceeds, the lower Nss becomes. This technique offers various advantages to the VLSI dielectric process.

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Tunnel‐oxide breakdown characteristics of floating‐gate‐type EEPROM

Sato

Fukuzaki

Hatakeyama

et al. 1989

Electron Comm Jpn Pt II

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This paper aims at the analysis of the breakdown characteristics and the mechanism of the tunnel oxide breakdown by the iterative rewriting of floating‐gate‐type EEPROM. The relation of number of rewritings until the tunnel oxide breakdown to the rewriting condition and the process condition is investigated. As a result, an approximate relation log NαQfg is derived, where N is the number of rewritings until the tunnel oxide breakdown and Qfg is the tunnel charge in rewriting. It was seen also that N is nearly proportional to the life of the tunnel oxide determined from TDDB characteristic. It is estimated that the major cause of the tunnel oxide breakdown is the trap of the electron in the tunnel oxide. The trapped electron can easily be released by the thermal treatment of some 5 hours, improving the life of the number of rewritings until breakdown.

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A 5V-only 16K EEPROM utilizing oxynitride dielectrics and EPROM redundancy

Cited by 26 publications

References 6 publications

A byte erasable 5V‐only 64 kbit EEPROM

A byte erasable 5V‐only 64 kbit EEPROM

Plasma Enhancement in Direct Nitridation of Silicon and Silicon-Dioxide

Tunnel‐oxide breakdown characteristics of floating‐gate‐type EEPROM

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