A bidirectional NMOSFET current reduction model for simulation of hot-carrier-induced circuit degradation

Quader, K.; Li, C.C.; Tu, R.; Rosenbaum, Elyse; Ko, P.K.; Hu, Chenming

doi:10.1109/16.249472

Cited by 45 publications

(16 citation statements)

References 21 publications

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“…3). Similar voltage-dependent current sources applied between source and drain have been used to simulate hot-carrier-induced degradation [7]. In 0741-3106/03$17.00 © 2003 IEEE our work, a nonlinear voltage-dependent current source between gate and drain of the inverter transistors was used to model the oxide leakage current between the inverter input and output.…”

Section: Resultsmentioning

confidence: 99%

A model for gate-oxide breakdown in CMOS inverters

Rodrı́guez

Stathis

Linder

2003

IEEE Electron Device Lett.

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The effect of oxide breakdown (BD) on the performance of CMOS inverters has been investigated. The results show that the inverter performance can be affected by the BD in a different way depending on the stress polarity applied to the inverter input. In all the cases, the oxide BD conduction has been modeled as gate-to-diffusion leakage with a power-law formula of the type = , which was previously found to describe the BD in capacitor structures. This implies that the BD physics at oxide level is the same as that at circuit level.Index Terms-CMOS, dielectric breakdown, hard breakdown (HBD), leakage currents, oxide breakdown, oxide reliability.

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Section: Resultsmentioning

confidence: 99%

A model for gate-oxide breakdown in CMOS inverters

Rodrı́guez

Stathis

Linder

2003

IEEE Electron Device Lett.

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“…This trend has been explained by lowering of the quasi-Fermi level and the masking effect of the velocity saturation region ͑VSR͒. 5 However, a skewed bell shape in ⌬I d /I d is observed for both the Lϭ0.18 and 0.24 m devices fabricated using 0.18 m technology. Since the Lϭ0.24 m device fabricated using 0.18 m technology also exhibits a skewed bell shape in ⌬I d /I d , Fig.…”

Section: Convergence Of Hot-carrier-induced Saturation-region Drain Cmentioning

confidence: 91%

“…This mechanism results in the reduction of ⌬I d /I d . 5 Second, Q inv also decreases since V c increases. This mechanism results in the increase of ⌬I d /I d .…”

Section: Convergence Of Hot-carrier-induced Saturation-region Drain Cmentioning

confidence: 95%

Convergence of hot-carrier-induced saturation-region drain current and linear-region drain current degradation in advanced n-channel metal–oxide–semiconductor field-effect transistors

Chen

Tsao

2003

Applied Physics Letters

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Articles you may be interested inAbnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxidesemiconductor field-effect-transistors Appl. Phys. Lett. 103, 022106 (2013); 10.1063/1.4811784 Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 99, 012106 (2011); 10.1063/1.3608241 Channel length dependence of hot-carrier-induced degradation in n -type drain extended metal-oxidesemiconductor transistors Appl. Phys. Lett. 93, 223504 (2008); 10.1063/1.3040693 Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxidesemiconductor transistors Appl. Phys. Lett. 92, 243501 (2008); 10.1063/1.2947588 1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses

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“…5). Similar voltage-dependent current sources applied between source and drain have been used to simulate hot-carrier-induced degradation [7]. In our work, as we have just considered oxide BD between input and output of the inverter, a nonlinear voltagedependent current source between gate and drain of the inverter transistors was used in the simulations.…”

Section: Breakdown Leakage Modelmentioning

confidence: 99%