A Comprehensive Review on the Single Gate, Double Gate, Tri-Gate, and Heterojunction Tunnel FET for Future Generation Devices

Blessy, P. Hannah; Shenbagavalli, A.; Samuel, T. S. Arun

doi:10.1007/s12633-022-02189-2

Cited by 5 publications

(1 citation statement)

References 51 publications

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“…Consequently, the adoption of alternative high-κ gate dielectric materials like HfO 2 and Al 2 O 3 has emerged as a prevalent technological strategy to address these challenges. On the other hand, researchers have also proposed various structural designs for TFETs, , including vertical TFET (V-TFET) and L-shaped TFET (L-TFET), to enhance TFET performance. From the perspective of gate electrode structure, options include single-gate TFET (SG-TFET), double-gate TFET (DG-TFET), triple-gate TFET (TG-TFET), and gate-all-around TFET (GAA-TFET), and so on.…”

Section: Introductionmentioning

confidence: 99%

A Study on the Performance of Gate-All-Around Heterojunction Tunnel Field-Effect Transistors Based on Polarization Effect

Guan,

Dou,

et al. 2024

ACS Appl. Electron. Mater.

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Tunnel field-effect transistors (TFETs) have gained prominence in low-power applications for their capability to surpass the subthreshold swing limit of 60 mV/decade. This paper introduces a TFET, named gate-all-around polar-TFET (GAA-P-TFET), which leverages the polarization effect at the interface of In 0.75 Ga 0.25 N/Al 0.1 In 0.9 N heterojunctions to enhance TFET performance, particularly to reduce the average subthreshold swing (SS) and increase the ON-OFF current ratio (I ON /I OFF ). The TCAD simulation results demonstrate that incorporating an Al 0.1 In 0.9 N layer between the source and channel regions notably improves the performance of the GAA-P-TFET compared to the conventional GAA-TFET. At a drain-source voltage (V DS ) of 0.5 V, the SS for the GAA-P-TFET reaches a minimum of 8.1 mV/decade within a current change spanning 9 orders of magnitude. Simultaneously, the I ON /I OFF can attain a maximum value of 10 12 . Furthermore, this study analyzes the impact of various parameters on device performance. The results show that the average subthreshold swing (SS) decreases with decreasing channel/drain doping concentration and gate dielectric layer thickness. Moreover, the ON-state current notably rises with an increase in device diameter and source doping concentration.

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Section: Introductionmentioning

confidence: 99%

A Study on the Performance of Gate-All-Around Heterojunction Tunnel Field-Effect Transistors Based on Polarization Effect

Guan,

Dou,

et al. 2024

ACS Appl. Electron. Mater.

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2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics

Chen,

Jiang,

Wang

et al. 2024

Adv Elect Materials

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AbstractsPower consumption has emerged as a central concern in the realm of complementary metal‐oxide‐semiconductor (CMOS) technology. Silicon‐based semiconductor devices have now approached the fundamental thermionic limit of the subthreshold swing (SS), which is 60 mV dec−1, as defined by the Boltzmann tyranny. Tunnel field‐effect transistors (TFETs) are considered promising low‐power devices due to the band‐to‐band tunneling mechanism, which effectively avoids the thermionic limit. However, TFETs require the establishment of a staggered band alignment and currently lack effective techniques for adjusting the band offset. Here, by harnessing the robust ferroelectric field inherent to 2D CuInP2S6 (CIPS), a 2D WSe2/MoS2 heterojunction as well as a WSe2 homojunction TFET controlled by ferroelectric gate are presented. The newly developed TFET achieves an ultra‐low SS of 14.2 mV dec−1 at room temperature, an on/off current ratio exceeding 108, and a minimal hysteresis window below 10 mV. Additionally, the device demonstrates gate tunable negative differential resistance (NDR) characteristics with a very large peak‐to‐valley current ratio (PVCR) of 10.56 at room temperature. These findings underscore the significant promise of 2D ferroelectric tuning heterojunction and homojunction for future low‐power electronic applications.

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A comparative study of work function variations in III-V heterojunction and homojunction tunnel field-effect transistors

Guan,

Lu,

Zhang

et al. 2024

Microelectronics Journal

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A Comprehensive Review on the Single Gate, Double Gate, Tri-Gate, and Heterojunction Tunnel FET for Future Generation Devices

Cited by 5 publications

References 51 publications

A Study on the Performance of Gate-All-Around Heterojunction Tunnel Field-Effect Transistors Based on Polarization Effect

A Study on the Performance of Gate-All-Around Heterojunction Tunnel Field-Effect Transistors Based on Polarization Effect

2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics

A comparative study of work function variations in III-V heterojunction and homojunction tunnel field-effect transistors

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