A Diffusion Mask for Germanium

Jordan, Elodie

doi:10.1149/1.2428117

Cited by 62 publications

(17 citation statements)

References 2 publications

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“…Silicon dioxide films were also produced by pyrolitic decomposition of tetraethyl orthosilicate a t 770 "C [7].…”

Section: Structure Investigationsmentioning

confidence: 99%

Noncrystalline Structure and Electronic Conduction of Silicon Dioxide Films

Revesz

1967

Physica Status Solidi (b)

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Thermal or anodic oxidation of silicon results in uniform noncrystalline SiO, films but small crystallites may form at surface disturbances; these are pushed by the growing oxide to the outer surface. These films remain noncrystalline even after prolonged heat treatment. The stability behavior of SiO,, SiO, and Si,N4 films, and their relation to the corresponding crystalline modifications indicate that distinction should be made between glassy (vitreous), e.g. SiO,, and amorphous, e.g. SiO, noncrystalline materials. Electronic conduction plays a predominant role in the anodization mechanism of silicon. The oxide structure is changing during constant current oxidation; the oxidation efficiency and rate increase with thickness, but the apparent electronic conductivity is constant. Electron (hole) trapping during constant voltage anodization leads to a current that decreases with the reciprocal of time. Impedance measurements on MOS capacitors showed that sizable electronic conduction may occur in localized regions ("channels"). The density of these channels and the extent of conduction depends on the oxidation method and substrate orientation. A comparison between SiO,, GeO,, and Si3N4 shows that with increasing covalency and, especially, n-character of the bond, the electronic conductivity and the ability to form noncrystalline structure increases. The n-bonding is probably greater along a channel than in its surrounding.Thermische oder anodische Oxydation von Silizium ergeben eine gleichmiiBige, nichtkristalline Si0,-Schicht, jedoch konnen sich Kristallite an UnregelmiiBigkeiten der Grenzfliiche zwischen Si und SiO, bilden; diese werden vom wachsenden Oxyd zur Obefliche geschoben. Diese Schichten bleiben auch nach einer ausgedehnten thermischen Behandlung nichtkristallin. Das Stabilitiitsverhalten der SiOa-, SiO-und Si,N,-Schichten und ihre Beziehung zu den entsprechenden Kritallmodifikationen zeigen, daB ein Unterschied zwischen glasartigen (z. B. SiO,) und amorphen (z. B. SiO) nichtkristallinen Materialien gemacht werden muB. Elektronische Leitung spielt eine iiberwiegende Rolle im Anodisierungsmechanismus von Silizium. Die Oxydstruktur veriindert sich wiihrend der Oxydation mit konstantem Strom; Wirkungsgrad und Geschwindigkeit der Oxydation steigen mit der Dicke an, wiihrend die scheinbare spezifische elektronische Leitfiihigkeit konstant bleibt. Elektron (Loch) ,,Trapping" wiihrend der Anodisierung mit konstanter Spannung bedingt einen Strom, der der Zeit umgekehrt proportional ist. Impedanzmessungen von MOS-Kondematoren zeigen, da13 merkliche elektronische Leitung in lokalisierten Regionen (,,Channels") auftreten kann. Die Dichte dieser Channels und das AusmaS der Leitfihigkeit hiingen von der Oxydationsmethode und der Orientierung der Unterlage ab. Ein Vergleich zwischen SiO,, GeO, und Si3N, zeigt, daB die elektronische Leitfihigkeit und die Moglichkeit nichtkristalline Strukturen zu formieren, mit steigender Homoopolaritit, insbesondere mit dem n-Charakter der Bindung, steigt. Die x-Bindung entlang eines ...

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“…Silicon dioxide films were also produced by pyrolitic decomposition of tetraethyl orthosilicate a t 770 "C [7].…”

Section: Structure Investigationsmentioning

confidence: 99%

Noncrystalline Structure and Electronic Conduction of Silicon Dioxide Films

Revesz

1967

Physica Status Solidi (b)

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“…They include the ability to deposit thick layers at high growth rates and low temperatures to avoid movement of diffusion fronts as well as the ability to form oxides on foreign substrates. Many silicon dioxide deposition systems have been investigated, for example, the direct oxidation of silane (1), decomposition of ethyl-triethoxy-silane (2), the reaction of silicon halides with carbon dioxide (3)(4)(5), as well as sputtering (6,7) and glow discharge reactions (8). The literature, however, contains no reference to the investigation of the silane/carbon dioxide reaction.…”

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confidence: 99%

The Preparation and Properties of Silica Films Deposited from Silane and Carbon Dioxide

Swann

Pyne

1969

J. Electrochem. Soc.

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Silicon dioxide has been deposited from a reaction involving silane and carbon dioxide. Hydrogen and argon were used as carrier gases. Growth rates were measured from 700° to 1100°C. The choice of carrier gas had a pronounced effect on the growth rate at low temperatures. Etch rates, dielectric loss, and infrared spectra are reported. Interface charge properties are shown under certain conditions to be stable and hysteresis free with typical NFB normalvalues of 1–3×1011 normalcharge/cm2 .

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“…The oxide mostly used is SiO2 obtained from the pyrolysis of tetraethylorthosilicate at high temperature (650~176 (1). The oxide can also be obtained at low temperature (300~176 but the reaction requires the use of oxygen (2).…”

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confidence: 99%

Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum Alkoxide

Aboaf¹

1967

J. Electrochem. Soc.

158

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Amorphous aluminum oxide films were deposited at 420~ by thermal decomposition of an aluminum alkoxide. The reducing or oxidizing atmosphere used during deposition affects the chemical and electrical properties of the oxide films. These films have shown superior characteristics when compared to SiO2 films deposited by a similar process under the same conditions. The dielectric properties of these A1208 films compare favorably with anodized A1203 films 9 The resistance of these films to moisture makes them attractive as coatings for passivation of electron devices. The electrical properties of silicon and germanium surfaces covered with these A1208 films vary according to the deposition atmosphere.

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A Diffusion Mask for Germanium

Abstract: not Available.

Cited by 62 publications

References 2 publications

Noncrystalline Structure and Electronic Conduction of Silicon Dioxide Films

Noncrystalline Structure and Electronic Conduction of Silicon Dioxide Films

The Preparation and Properties of Silica Films Deposited from Silane and Carbon Dioxide

Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum Alkoxide

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