A Fully Transparent Resistive Memory for Harsh Environments

Yang, Po Kang; Ho, Chih Hsiang; Lien, Der Hsien; Retamal, José Ramón Durán; Kang, Chen Fang; Chen, Kuan-Ming; Huang, Teng Han; Yu, Yueh Chung; Wu, Chih-I; He, Jr Hau

doi:10.1038/srep15087

Cited by 17 publications

(13 citation statements)

References 41 publications

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“…To test the data retention of the devices, 20 devices are set/reset to a series of different resistance values, and keeping them on a heating table at 85 °C [42]. The resistance values were measured with a voltage of 0.1 V every 100 s. It can be seen from Fig.…”

Section: Resultsmentioning

confidence: 99%

A Multi-level Memristor Based on Al-Doped HfO2 Thin Film

Liu

et al. 2019

Nanoscale Res Lett

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Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO 2 , have been favored by lots of researchers because of its simple structure, high integration, fast operation speed, low power consumption, and high compatibility with advanced (complementary metal oxide silicon) CMOS technologies. In this paper, a 20-level stable resistance states Al-doped HfO 2 -based memristor is presented. Its cycles endurance, data retention time, and resistance ratio are larger than 10 3 , > 10 4 s, and > 10, respectively.

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Section: Resultsmentioning

confidence: 99%

A Multi-level Memristor Based on Al-Doped HfO2 Thin Film

Liu

et al. 2019

Nanoscale Res Lett

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“…24 Unlike the dense chromium electrodes, a conductive ITO film deposited by RF sputtering has oxygen vacancies acting as both a source for free electrons and a reservoir for oxygen ions. Yang et al 25 reported a bipolar switching behavior in the ITO/HfO 2 /ITO system which usually involves conductive filaments consisting of oxygen vacancies. This observation indicates that ITO can store oxygen ions in a reversible way.…”

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confidence: 99%

A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure

Wan

Darling

Majumdar

et al. 2017

Applied Physics Letters

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Forming-free bipolar resistive switching behavior in an ITO/V2O5/ITO structure is observed. While the bottom ITO layer functions as a common ground electrode, the top ITO layer is an active element and used as an oxygen reservoir, with an additional metal electrode patterned on its top for making contact. In contrast to typical metal/transition metal oxide/metal based resistive memories, our device exhibits a low resistance state in its virgin state and is switched to a high resistance state when a forward bias of ∼+2.5 V is applied. The device can be reset to its original state at a reverse bias of ∼–1.5 V. A noticeable decrease in switching voltage with a reduced top contact area is observed, indicating a strong electric field enhanced switching mechanism. Different from the widely seen conductive filament mechanism in bipolar switching, we explain the switching behavior by the migration of oxygen ions at the top ITO/V2O5 interface. When oxygen ions are extracted to the ITO side, an interfacial layer with reduced oxidation states is formed and acts as a Schottky barrier that suppresses the current through the whole device. The results suggest future applications in low power, high speed integrated non-volatile memories.

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“…The set pulse with only a single voltage amplitude was realized to set the device in more than a dozen different resistance states. For the data retention characteristic, 12 devices were set to preset conductance by respectively applying 1, 2, 5, 10, 20, 40, 70, 110, 160, 220, 300, and 400 set pulses and were kept at 85 °C [39]. Figure 7 shows the retention test of all levels for resistance at 85 °C.…”

Section: Multi-level Switchingmentioning

confidence: 99%

Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse

2021

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In this paper, the resistive switching characteristics in a Ti/HfO2: Al/Pt sandwiched structure are investigated for gradual conductance tuning inherent functions. The variation in conductance of the device under different amplitudes and voltage pulse widths is studied. At the same time, it was found that the variation in switching parameters in resistive random-access memory (RRAM) under impulse response is impacted by the initial conductance states. The device was brought to a preset resistance value range by energizing a single voltage amplitude pulse with a different number of periodicities. This is an efficient and simple programming algorithm to simulate the strength change observed in biological synapses. It exhibited an on/off of about 100, an endurance of over 500 cycles, and a lifetime (at 85 °C) of around 105 s. This multi-level switching two-terminal device can be used for neuromorphic applications to simulate the gradual potentiation (increasing conductance) and inhibition (decreasing conductance) in an artificial synapse.

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A Fully Transparent Resistive Memory for Harsh Environments

Cited by 17 publications

References 41 publications

A Multi-level Memristor Based on Al-Doped HfO2 Thin Film

A Multi-level Memristor Based on Al-Doped HfO2 Thin Film

A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure

Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse

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