A highly efficient UV photodetector based on a ZnO microwire p–n homojunction

Shi, Linlin; Wang, Fei; Li, Binghui; Chen, Xing; Ye, Bin; Zhao, Dongxu; Shen, Dezhen

doi:10.1039/c3tc32547d

Cited by 55 publications

(31 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In short, by controlling applied strain, these results can be employed to optimize the devices' performance. The performance is close to the best known ZnO device, see Table‐1 (Supporting information) …”

supporting

confidence: 72%

Piezophototronic Effect Modulated Multilevel Current Amplification from Highly Transparent and Flexible Device Based on Zinc Oxide Thin Film

Kumar

Kim

Lee

et al. 2018

Small

View full text Add to dashboard Cite

In this work, a strain modulated highly transparent and flexible ZnO/Ag‐nanowires/polyethylene terephthalate optoelectronic device is developed. By utilizing the applied external strain‐induced piezophototronic effects of a ZnO thin film, a UV‐generated photocurrent is tuned in a wide range starting from 0.01 to 85.07 µA and it is presented in a comprehensive map. Particularly, the performance of the device is effectively enhanced 7733 times by compressive strain, as compared to its dark current in a strain‐free state. The observed results are explained quantitatively based on the modulation of oxygen desorption/absorption on the ZnO surface under the influence of applied strains. The presented simple optoelectronic device can be easily integrated into existing planar structures, with potential applications in highly transparent smart windows, wearable electronics, smartphones, security communication, and so on.

show abstract

supporting

confidence: 72%

Piezophototronic Effect Modulated Multilevel Current Amplification from Highly Transparent and Flexible Device Based on Zinc Oxide Thin Film

Kumar

Kim

Lee

et al. 2018

Small

View full text Add to dashboard Cite

show abstract

“…These doped p‐type materials are very important component of homojunction. Up until now, many materials have been reported to constructed homojunction photodiodes, including Si, ZnO, MoS 2 , MoSe 2 , Cu 2 O, graphene, etc. Considering the wide application of ZnO and graphene, the homojunction based on these materials are more meaningful.…”

Section: Photodetectors Based On Hybrid Structuresmentioning

confidence: 99%

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

et al. 2018

View full text Add to dashboard Cite

Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

show abstract

“…1 In particular, ZnO has drawn great interest due to its low cost, tunable bandgap, and ability to be operable in harsh environments. 2 Furthermore, in order to enhance the photosensitivity and speed of the devices based on ZnO, several attempts were made, for instance: surface-to-volume ratio, 3,4 decoration with semiconductors 5 or metals [6][7][8] with subsequent diffusion, 9 doping with metals or no-metals, [10][11][12][13] and formation of cap layers. 14,15 A ZnO UV photodetector has been fabricated by ultraviolet nanoimprint lithography with hydrothermal synthesis in which it was produced as Schottky barriers in order to get an ultrafast response.…”

Section: Introductionmentioning

confidence: 99%

Role of defects and their complexes on the dependence of photoconductivity on dark resistivity of single ZnO microwires

Villafuerte

Zamora

Bridoux

et al. 2017

Journal of Applied Physics

View full text Add to dashboard Cite

We have studied the correlation between the photoconductivity and the dark resistivity of single ZnO microwires. We found that as-grown microwires with higher dark resistivities have higher photoconductivities. However, when the microwires are thermal treated in vacuum, this correlation is inverted. We have also analyzed the behavior of photoconductivity on protonated as-grown samples. We discuss the origin of these behaviors in terms of the interplay of oxygen and zinc vacancies and their complexes acting as recombination or trapping centers. Published by AIP Publishing.

show abstract

A highly efficient UV photodetector based on a ZnO microwire p–n homojunction

Cited by 55 publications

References 34 publications

Piezophototronic Effect Modulated Multilevel Current Amplification from Highly Transparent and Flexible Device Based on Zinc Oxide Thin Film

Piezophototronic Effect Modulated Multilevel Current Amplification from Highly Transparent and Flexible Device Based on Zinc Oxide Thin Film

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

Role of defects and their complexes on the dependence of photoconductivity on dark resistivity of single ZnO microwires

Contact Info

Product

Resources

About