A highly reliable flip chip solution based on electroplated AuSn bumps in a leadless package

Theuss, H.; Pressel, K.; Paulus, S.; Kilger, T.; Dangelmaier, J.; Lehner, R.; Eisener, B.; Kiendl, H.; Schischka, Jan; Graff, Andreas; Petzold, Matthias

doi:10.1109/ectc.2005.1441278

Cited by 12 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the present study, high resolution material analyzes using Transmission Electron Microscopy is based on samples prepared by a FIB-based lift out-technique taken directly from metallographic cross sections of the interconnects (see also [3]). During the case studies presented in this paper, different FIB workstations (Zeiss Crossbeam© NVision, Zeiss Crossbeam© 1540 EsB, FEI Quanta 3D) have been used whereas the prepared TEM lamellas were subsequently handled and removed from the samples using a needle manipulator and placed onto the TEM specimen holder.…”

Section: Methodsmentioning

confidence: 99%

Microstructure and mechanical properties of laser ablation cleaned NiP platings for aluminum wire bonding

Bennemann

Dresbach

Lorenz

et al. 2010

3rd Electronics System Integration Technology Conference ESTC

View full text Add to dashboard Cite

Aluminum wire bonding to nickel surfaces is often used in automotive applications. For assurance of a high quality contact a clean substrate without any contaminants is required. In this study lead frame structures consisting of matte nickel, bright nickel and electrolytic deposited NiP (up to 0.5 m thickness) were used for Aluminum wire bonding. The lead frame was partially plated with tin at the connector end (opposite from the wire bonding surface). During the tin plating process an unintentional tin layer of about 10-20nm was deposited onto the NiP wire bonding surface. Laser ablation was used to clean the NiP areas before wire bonding. This paper presents microstructural investigations of the NiP/Sn platings with and without laser ablation. Using FIB/SEM/TEM the thickness and crystalline structure of NiP layer was analyzed. The phosphorous concentration gradient across the depth of the NiP layer was investigated by nano-spot EDX. Using nanoindentation measurements, the microhardeness of the laser etched and non-laser etched areas was determined and correlated to the microstructural phenomena. The investigations show that not only does the laser treatment remove the tin contamination but it also removes the P-rich surface film. The lasered samples also showed a very coarse grain structure close to the Ni film which indicates a temperature-induced recrystallization effect. These results correlate with the mechanical investigations: At a depth of 50nm to 200nm significant lower indentation hardness was measured in the lasered specimen compared to the non-lasered specimen as detected by CSM nanoindentation measurements as well as standard nanoindentation measurements

show abstract

Section: Methodsmentioning

confidence: 99%

Microstructure and mechanical properties of laser ablation cleaned NiP platings for aluminum wire bonding

Bennemann

Dresbach

Lorenz

et al. 2010

3rd Electronics System Integration Technology Conference ESTC

View full text Add to dashboard Cite

show abstract

“…For the TSLP package development fine filler mold compound was investigated and applied to fill the narrow spaces. The package was also investigated in respect to flip-chip applications (see [4], [5]). Fig.…”

Section: Thin Small Leadless Packagementioning

confidence: 99%

Assembly and Packaging Enabling System Integration

Pressel

Beer

Wojnowski

2013

International Symposium on Microelectronics

View full text Add to dashboard Cite

More than Moore is a major trend to tackle the increasing difficulties of traditional Moore's law scaling. System in Package technologies, which allow heterogeneous integration, are appearing in ever more electronic applications. Furthermore we observe merging of silicon wafer technology with assembly and packaging technologies. Today a more coherent development taking into account chip, package, and the board is needed. In this paper we show how assembly and packaging can take up the slack because traditional More Moore downscaling is becoming more difficult. First, we introduce the Thin Small Leadless Package (TSLP) e.g. used in mobile systems. The TSLP is similar to the Quad Flat No-Lead (QFN) package, but thinner and with less parasitics. Second, we introduce wafer level type packages. The limits of standard wafer level packaging in respect to I/O counts pushed the development of the embedded Wafer Level Ball Grid Array (eWLB). We demonstrate the outstanding system integration capabilities of the eWLB including excellent mm-wave performance. For all the above mentioned packages chip and package technologies merge. They are door opener for nanoelectronic devices in respect to energy efficiency, mobility and security.

show abstract

High resolution analysis of intermetallic compounds in microelectronic interconnects using Electron Backscatter Diffraction and Transmission Electron Microscopy

Krause

März

Bennemann

et al. 2010

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

View full text Add to dashboard Cite

In this paper, methods for high resolution analysis of the intermetallics formed in the interfaces of microelectronic packaging interconnects are discussed. The application of Transmission Electron Microscopy (TEM) in combination with energy dispersive x-ray analysis and electron diffraction for a definite identification of intermetallic compounds is compared to new approaches based on Electron Backscatter Diffraction (EBSD). The application and the potential of EBSD to detect the Cu/Sn, Ni/Sn and Au/Al intermetallics being practically relevant for soldering and wire bonding is demonstrated. Since EBSD can be performed during standard Scanning Electron Microscopy (SEM), it is easier to perform and less expensive than TEM. Thus, the method may serve as a new tool supporting microstructure diagnostics and reliability investigations for new innovative technologies in microelectronic integration. However, TEM studies are still required for detailed investigations of thin in termetallic films and the related failure mechanisms due to their superior spatial resolution and defect detection capabilities

show abstract

A highly reliable flip chip solution based on electroplated AuSn bumps in a leadless package

Cited by 12 publications

References 6 publications

Microstructure and mechanical properties of laser ablation cleaned NiP platings for aluminum wire bonding

Microstructure and mechanical properties of laser ablation cleaned NiP platings for aluminum wire bonding

Assembly and Packaging Enabling System Integration

High resolution analysis of intermetallic compounds in microelectronic interconnects using Electron Backscatter Diffraction and Transmission Electron Microscopy

Contact Info

Product

Resources

About