A hybrid AlGaInAs-silicon evanescent waveguide photodetector

Park, Hyundai; Fang, Alexander W.; Jones, Richard E.; Cohen, Oded; Raday, Omri; Sysak, M.N.; Paniccia, Mario; Bowers, John E.

doi:10.1364/oe.15.006044

Cited by 164 publications

(101 citation statements)

References 17 publications

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“…Although silicon is not suited as a light emitter or detector in the infrared, several approaches have been demonstrated to integrate lasers and detectors on a silicon platform [2][3][4][5] modulators and detectors, is an important requirement. This can be achieved by using e.g.…”

Section: Introductionmentioning

confidence: 99%

Realization of a Compact Optical Interconnect on Silicon by Heterogeneous Integration of III–V

Spuesens

Bauwelinck

Régrény

et al. 2013

IEEE Photon. Technol. Lett.

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Abstract-We present a compact optical interconnect on a silicon-on-insulator platform consisting of a directly modulated microdisk laser and detector connected via a silicon waveguide. A single III-V epitaxial structure that contains layers for both the laser and detector ensures that dense integration becomes possible. All fabrication steps for the laser and detector, except for the detector mesa, are carried out simultaneously. The microdisk laser has a threshold current of 0.45 mA and a slope efficiency of 57 µW/mA. The responsivity of the detectors is 0.69 A/W. The full optical link has a static efficiency of 3% and a bandwidth of 7.6 GHz. A large signal modulation was applied and a 10 Gb/s bit pattern could be resolved.Index Terms-Heterogeneous integration, microdisk laser (MDL), optical interconnect, photonic integration, silicon photonics, waveguide photodetector.

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Section: Introductionmentioning

confidence: 99%

Realization of a Compact Optical Interconnect on Silicon by Heterogeneous Integration of III–V

Spuesens

Bauwelinck

Régrény

et al. 2013

IEEE Photon. Technol. Lett.

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“…Hydrophilic bonding, adhesion, and hybrid integration techniques for photonic microelectronic fabrication have generated a useful set of active and passive optical components for integration into microelectronic devices [2]. Some of the many photonic structures created include Fabry-Perot cavities [16,19], racetrack rings [20], mode-lock lasers [21], microdisks [22], distributed feedback lasers [23], distributed Bragg reflectors [24], micro-rings [25] lasers, amplifiers [26], PIN [27], metal-semiconductor-metal junctions [28] photodetectors, electroabsorption modulators [29], Mach-Zehnder interferometers [30], micro-disk modulators [31], and high-speed switches [32]. More advanced integration circuits have also been demonstrated [28,33].…”

Section: Integration Of Photonic Components Into Microelectronicsmentioning

confidence: 99%

Electrospinning for nano- to mesoscale photonic structures

et al. 2016

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Abstract:The fabrication of photonic and electronic structures and devices has directed the manufacturing industry for the last 50 years. Currently, the majority of small-scale photonic devices are created by traditional microfabrication techniques that create features by processes such as lithography and electron or ion beam direct writing. Microfabrication techniques are often expensive and slow. In contrast, the use of electrospinning (ES) in the fabrication of microand nano-scale devices for the manipulation of photons and electrons provides a relatively simple and economic viable alternative. ES involves the delivery of a polymer solution to a capillary held at a high voltage relative to the fiber deposition surface. Electrostatic force developed between the collection plate and the polymer promotes fiber deposition onto the collection plate. Issues with ES fabrication exist primarily due to an instability region that exists between the capillary and collection plate and is characterized by chaotic motion of the depositing polymer fiber. Material limitations to ES also exist; not all polymers of interest are amenable to the ES process due to process dependencies on molecular weight and chain entanglement or incompatibility with other polymers and overall process compatibility. Passive and active electronic and photonic fibers fabricated through the ES have great potential for use in light generation and collection in optical and electronic structures/ devices. ES produces fiber devices that can be combined with inorganic, metallic, biological, or organic materials for novel device design. Synergistic material selection and postprocessing techniques are also utilized for broad-ranging applications of organic nanofibers that span from biological to electronic, photovoltaic, or photonic. As the ability to electrospin optically and/or electronically active materials in a controlled manner continues to improve, the complexity and diversity of devices fabricated from this process can be expected to grow rapidly and provide an alternative to traditional resource-intensive fabrication techniques.

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“…Fabry-Perot lasers at 1326 nm [7] and 1577 nm [8] have been fabricated using this hybrid waveguide architecture as well as optical amplifiers [9], photodetectors [10] and ring lasers [11]. The generic device process flow is as follows.…”

Section: Device Fabricationmentioning

confidence: 99%

“…After bonding the InP is patterned into mesa's; the N-and P-metals are deposited followed by proton implantation of the mesa to form a conductive channel in the center of the mesa through which current can flow. A typical hybrid silicon active cross-section is shown in Fig 1. More details of device fabrication are given in [7][8][9][10][11].…”

Section: Device Fabricationmentioning

confidence: 99%

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Hybrid silicon integration

Jones

Park

Fang

et al. 2007

J Mater Sci: Mater Electron

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An overview is presented of the hybrid AlGaInAs-silicon platform that enables wafer level integration of III-V optoelectronic devices with silicon photonic devices based on silicon-on-insulator (SOI). Wafer bonding AlGaInAs quantum wells to an SOI wafer allows large scale hybrid integration without any critical alignment steps. Discrete hybrid silicon optical amplifiers, lasers and photodetectors are described, and the integration of a ring laser with on-chip and photo-detector and amplified spontaneous emission (ASE) seed to enable unidirectional lasing.

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A hybrid AlGaInAs-silicon evanescent waveguide photodetector

Cited by 164 publications

References 17 publications

Realization of a Compact Optical Interconnect on Silicon by Heterogeneous Integration of III–V

Realization of a Compact Optical Interconnect on Silicon by Heterogeneous Integration of III–V

Electrospinning for nano- to mesoscale photonic structures

Hybrid silicon integration

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