A <i>Ku</i>-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology

Zhang, Jincan; Zhang, Yuming; Lu, Hongliang; Zhang, Yimen; Liu, Bo; Zhang, Leiming; Wang, Jinchan; Zhang, Liwen

doi:10.1142/s0218126616500535

Cited by 4 publications

(1 citation statement)

References 11 publications

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“…Although lots of research studies are dedicated to replacing HBT-based PAs with complementary metal oxide semiconductor power amplifiers (CMOS PAs); (Baek et al , 2016; Qian et al , 2016), HBT-based PAs are currently dominating the market for wireless communication applications. GaAs HBTs adopted in this paper are also because of their reliable fabrication process and lower manufacturing cost compared to GaAs pseudomorphic high electron mobility transistor and indium phosphide HBT (Zhang et al , 2016; Zhang et al , 2018).…”

Section: Introductionmentioning

confidence: 99%

A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

Liu

Zhang

et al. 2020

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Purpose Power amplifiers (PAs) play an important role in wireless communications because they dominate system performance. High-linearity broadband PAs are of great value for potential use in multi-band system implementation. The purpose of this paper is to present a cascode power amplifier architecture to achieve high power and high efficiency requirements for 4.2∼5.4 GHz applications. Design/methodology/approach A common emitter (CE) configuration with a stacked common base configuration of heterojunction bipolar transistor (HBT) is used to achieve high power. T-type matching network is used as input matching network. To increase the bandwidth, the output matching networks are implemented using the two L-networks. Findings By using the proposed method, the stacked PA demonstrates a maximum saturated output power of 26.2 dBm, a compact chip size of 1.17 × 0.59 mm2 and a maximum power-added efficiency of 46.3 per cent. The PA shows a wideband small signal gain with less than 3 dB variation over working frequency. The saturated output power of the proposed PA is higher than 25 dBm between 4.2 and 5.4 GHz. Originality/value The technology adopted for the design of the 4.2-to-5.4 GHz stacked PA is the 2-µm gallium arsenide HBT process. Based on the proposed method, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier because of high output stacking impedance.

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Section: Introductionmentioning

confidence: 99%

A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

Liu

Zhang

et al. 2020

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Modeling and analysis for the effects of gamma irradiation on the DC and AC performance in InGaP/GaAs SHBTs

Zhang

Wang

et al. 2019

Radiation Effects and Defects in Solids

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A Very Low Power Quadrature VCO with Modified Current-Reuse and Back-Gate Coupling Topology

Wan

Dong

Zhou

et al. 2017

J CIRCUIT SYST COMP

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In this paper, a very low power modified current-reused quadrature voltage-controlled oscillator (QVCO) is proposed with the back-gate coupling technique for the quadrature signal generation. By stacking switching transistors in series like a cascode, the modified current-reused QVCO can be constructed in a totem-pole manner to reuse the dc biasing current and lower the power consumption. By utilizing the back-gates of switching transistors as coupling terminals to achieve the quadrature outputs, the back-gate coupled QVCO improves the phase noise and reduces the power consumption compared to the conventional coupling transistor based topology. Together with the modified current-reuse and back-gate coupling techniques, the proposed QVCO can operate at reduced supply voltage and power consumption while maintaining remarkable circuit performance in terms of low phase noise and wide tuning range. With a dc power of 1.6[Formula: see text]mW under a 0.8[Formula: see text]V supply voltage, the simulation results show the tuning range of the QVCO is from 2.36 to 3.04[Formula: see text]GHz as the tuning voltage is varied from 0.8 to 0.0[Formula: see text]V. The phase noise is [Formula: see text]118.3[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset frequency from the carrier frequency of 2.36[Formula: see text]GHz and the corresponding figure-of-merit of the QVCO is [Formula: see text]183.7[Formula: see text]dBc/Hz.

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A Ku-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology

Cited by 4 publications

References 11 publications

A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

Modeling and analysis for the effects of gamma irradiation on the DC and AC performance in InGaP/GaAs SHBTs

A Very Low Power Quadrature VCO with Modified Current-Reuse and Back-Gate Coupling Topology

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