2015
DOI: 10.1002/mop.28948
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A Ku‐band 3‐bit phase shifter MMIC using GaAs phemt technology for phased array system

Abstract: A Ku‐band 3‐bit switch‐type phase shifter with low insertion loss, low magnitude variation, and low rms phase error is designed and fabricated on 0.15‐μm pHEMT process. For all eight states, the insertion loss is 6.5 ± 1.5 dB from 10–14 GHz and the input return loss is >8.5 dB over 10–14 GHz. The phase shifter achieves a rms phase error of 2.2° and a rms amplitude error of 0.37 dB at 12 GHz with total chip size of 1.5 ×1 mm2. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:771–774, 2015

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Cited by 7 publications
(3 citation statements)
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“…The RMS error is 1° at 8.5 GHz and less than 3° over whole operating frequency range. The phase response is better than 3-bit phase shifter proposed in (Yunwei et al , 2013) of 7.9° over 2.3-2.7 GHz with PIN diode Technology and (Tsai et al , 2015) of 15° over 10-14 GHz with GaAs pHEMT Technology for that the high-pass/low-pass network has the advantage in relative flat broadband phase response compared to the loaded-line and all-pass network networks when the phase shift value is large, especially. In Figure 10, it can be observed that the RMS amplitude error is less than 1.1 dB from 8-10 GHz.…”
Section: Measured Performancementioning
confidence: 77%
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“…The RMS error is 1° at 8.5 GHz and less than 3° over whole operating frequency range. The phase response is better than 3-bit phase shifter proposed in (Yunwei et al , 2013) of 7.9° over 2.3-2.7 GHz with PIN diode Technology and (Tsai et al , 2015) of 15° over 10-14 GHz with GaAs pHEMT Technology for that the high-pass/low-pass network has the advantage in relative flat broadband phase response compared to the loaded-line and all-pass network networks when the phase shift value is large, especially. In Figure 10, it can be observed that the RMS amplitude error is less than 1.1 dB from 8-10 GHz.…”
Section: Measured Performancementioning
confidence: 77%
“…Many communication and radar systems are based on phased-array antennas for achieving electronic beam control and fast beam scanning, such as collision avoidance, the global positioning system (GPS) and active phased array antennas (APAAs) (Louis, 1974; Liang et al , 2015). Several solid-state phase shifters with the PIN diode and GaAs FET technology applied into the APAAs have been reported (Teshiba et al , 2002; Hangai et al , 2010; Tsai et al , 2015). Although the good performance is obtained, there is still some limitations to extend the application.…”
Section: Introductionmentioning
confidence: 99%
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