A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

关宝璐,; 任秀娟,; 李川,; 李硕,; 史国柱,; 郭霞,

doi:10.1088/1674-1056/20/9/094206

Cited by 3 publications

(1 citation statement)

References 19 publications

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“…The vertical-cavity surface-emitting laser (VCSEL) has become an efficient power light source in optical storage, gas detection, high bit-rate date transmission, optical interconnection, and supercomputing, due to its advantages, such as low cost, low power consumption, small size, single longitude mode operation, and high speed modulation. [1][2][3][4][5][6][7][8] The 980-nm VCSEL has usually been used for pumping the solidstate and fiber laser. [9,10] In recent years, great progress has been achieved in this field, and there have been extensive applications in short distance optical networks.…”

Section: Introductionmentioning

confidence: 99%

Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers

Shi¹,

Guan²,

Li³

et al. 2013

Chinese Phys. B

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We presented 980-nm oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with a 16-μm oxide aperture. Optical power, voltage, and emission wavelength are measured in an ambient temperature range of 5 °C–80 °C. Measurements combined with an empirical model are used to analyse the power dissipation in the device and the physical mechanism contributing to the thermal rollover phenomenon in VCSEL. It is found that the carrier leakage induced self-heating in the active region and the Joule heating caused by the series resistance are the main sources of power dissipation. In addition, carrier leakage induced self-heating increases as the injection current increases, resulting in a rapid decrease of the internal quantum efficiency, which is a dominant contribution to the thermal rollover of the VCSEL at a larger current. Our study provides useful guidelines to design a 980-nm oxide-confined VCSEL for thermal performance enhancement.

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Section: Introductionmentioning

confidence: 99%

Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers

Shi¹,

Guan²,

Li³

et al. 2013

Chinese Phys. B

Self Cite

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Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR

Guan

Arafin

et al. 2018

Photonics and Nanostructures - Fundamentals and Applications

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Step instability of the In_0.2Ga_0.8As (001) surface during annealing

Bi-Chan¹,

Zhou²,

Luo³

et al. 2012

Chinese Phys. B

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Anisotropic evolution of the step edges on the compressive-strained In0.2Ga0.8As/GaAs(001) surface has been investigated by scanning tunneling microscopy (STM). The experiments suggest that step edges are indeed sinuous and protrude somewhere a little way along the [11̄0] direction, which is different from the classical waviness predicted by the theoretical model. We consider that the monatomic step edges undergo a morphological instability induced by the anisotropic diffusion of adatoms on the terrace during annealing, and we improve a kinetic model of step edge based on the classical Burton—Cabrera—Frank (BCF) model in order to determine the normal velocity of step enlargement. The results show that the normal velocity is proportional to the arc length of the peninsula, which is consistent with the first result of our kinetic model. Additionally, a significant phenomenon is an excess elongation along the [11̄0] direction at the top of the peninsula with a higher aspect ratio, which is attributed to the restriction of diffusion lengths.

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A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

Abstract: A low-threshold and high-power oxide-confined 850-nmAlInGaAs strained quantum-well vertical-cavity surface-emitting laser * Guan Bao-Lu( ), Ren Xiu-Juan( ), Li Chuan( ), Li Shuo( ), Shi Guo-Zhu( ), and Guo Xia( ) †

Cited by 3 publications

References 19 publications

Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers

Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers

Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR

Step instability of the In_0.2Ga_0.8As (001) surface during annealing

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A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

Abstract: A low-threshold and high-power oxide-confined 850-nmAlInGaAs strained quantum-well vertical-cavity surface-emitting laser * Guan Bao-Lu( ), Ren Xiu-Juan( ), Li Chuan( ), Li Shuo( ), Shi Guo-Zhu( ), and Guo Xia( ) †

Cited by 3 publications

References 19 publications

Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers

Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers

Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR

Step instability of the In0.2Ga0.8As (001) surface during annealing

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Step instability of the In_0.2Ga_0.8As (001) surface during annealing