A MESFET Model for Use in the Design of GaAs Integrated Circuits

Curtice, W.R.

doi:10.1109/tmtt.1980.1130099

Cited by 418 publications

(104 citation statements)

References 16 publications

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“…One of the first large-signal equivalent-circuit FET models was proposed by Van Tuyl and Liechti in 1974, which was later simplified by Curtice in 1980, who introduced a "quadratic model," using a square law dependency for the "ohmic" region and a function to model saturation in the drain-source current (see [52] (TOM), which improved the accuracy. Jastrzebski's model from the same era followed the more common formulation.…”

Section: A Equivalent-circuit Modelsmentioning

confidence: 99%

Computer-aided design of RF and microwave circuits and systems

Steer

Bandler

Snowden

2002

IEEE Trans. Microwave Theory Techn.

125

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Abstract-The history of RF and microwave computer-aided engineering is documented in the annals of the IEEE Microwave Theory and Techniques Society. The era began with elaborate analytically based models of microwave components and simple computer-aided techniques to cascade, cascode, and otherwise connect linear component models to obtain the responses of linear microwave circuits. Development has become rapid with today's computer-oriented microwave practices addressing complex geometries and with the ability to globally model and optimize large circuits. The pursuit of accurate models of active devices and of passive components continues to be a key activity.

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Section: A Equivalent-circuit Modelsmentioning

confidence: 99%

Computer-aided design of RF and microwave circuits and systems

Steer

Bandler

Snowden

2002

IEEE Trans. Microwave Theory Techn.

125

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“…This is analogous to the statement that , where total mobile charge and is the velocity of mobile charge; or, in other words, current density , where is the total mobile charge density. The depletion-layer thickness under the Schottky gate can be found from the solution of Poisson's equation [6] and it is equal to (4) where is the built-in voltage of the Schottky barrier, is the gate voltage, and is the potential along the channel. The pinch-off voltage is given by (5) where is the dielectric constant of GaAs.…”

Section: Linear Mode Operationmentioning

confidence: 99%

A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior

Barić

McNally

1998

IEEE Trans. Educ.

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Abstract-The explanation of GaAs metal-semiconductor fieldeffect transistor (MESFET) operation often involves the use of simplistic analytical formulas, which serve to obscure the more subtle physics of device action. We consider here a simple onedimensional (1-D) model for GaAs MESFET's, which avoids more confusing numerical modeling schemes, yet still facilitates an analysis of the physical functionality of the device. The model takes into account current saturation due to either velocity saturation or channel pinch-off, the modulation of effective gate length, and the series resistance of the regions beyond the gate. The results of the model have been compared to experimental data readily obtained from the literature, and the agreement has been shown to be good.Index Terms-Gallium arsenide (GaAs) modeling, I-V characteristics, metal-semiconductor field-effect transistor (MESFET).

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“…However, the MESFET is treated as a two-terminal device in this case. In the configuration of Fig smaller than Cgs which becomes dominant [6]. In such models capacitances of Schottky barrier diodes are considered and the capacitance change due to the gate voltage can be explained by the space charge model.…”

Section: Using Mesfet As Three-terminal Varactormentioning

confidence: 99%

Tunable Active Microwave Bandpass Filters Using Three-Terminal MESFET Varactors

Lin¹,

Itoh²

1991

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A MESFET Model for Use in the Design of GaAs Integrated Circuits

Cited by 418 publications

References 16 publications

Computer-aided design of RF and microwave circuits and systems

Computer-aided design of RF and microwave circuits and systems

A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior

Tunable Active Microwave Bandpass Filters Using Three-Terminal MESFET Varactors

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