A monolithically integrated 190-GHz SiGe push-push oscillator

Wanner, R.; Lachner, Rudolf; Olbrich, G.R.

doi:10.1109/lmwc.2005.859996

Cited by 36 publications

(6 citation statements)

References 15 publications

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“…The tuning range and phase noise performance remains the same. Table I compares the performance of this work and some previously reported signal generation circuits that operate at frequencies close to and above [7]- [9]. This circuit achieves the highest output power with a very wide tuning range.…”

Section: Measurement Resultsmentioning

confidence: 98%

33–43 GHz and 66–86 GHz VCO With High Output Power in an 80 GHz <formula formulatype="inline"><tex Notation="TeX">${\rm f}_{\rm T}$</tex></formula> SiGe HBT Technology

Liu

Trasser

Schumacher

2010

IEEE Microw. Wireless Compon. Lett.

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This letter presents a signal generation circuit that combines a wide tuning range voltage controlled oscillator (VCO) and a frequency doubler. The VCO provides two differential outputs with different power levels. A push-push frequency doubler is designed and cascaded to the high power output of the VCO, while the low power output is reserved to drive a frequency divider in a PLL. The VCO can be tuned from 33 to 43 GHz, with around 0 dBm output power at the low power output. Simultaneously, signal generation from 66 to 86 GHz is achieved at the doubler output, with a maximum output power of 1.1 dBm at 74 GHz ( 2.5 dBm at 81 GHz). The measured phase noise at the VCO output and the doubler output are 91 dBc/Hz and 83 dBc/Hz at 1 MHz offset ( 112 dBc/Hz and 106 dBc/Hz at 10 MHz offset), respectively. The circuit is realized in a 0.8 m SiGe heterojunction bipolar transistor process, with f T f max of 80/90 GHz. The VCO consumes 81 mA current while the doubler consumes an extra 17 mA from a 4 V supply. The circuit demonstrates the possibility of wide-band signal generation up to f max with sufficient output power (e.g. to drive a mixer) in a conservatively scaled, low-cost process.

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Section: Measurement Resultsmentioning

confidence: 98%

33–43 GHz and 66–86 GHz VCO With High Output Power in an 80 GHz <formula formulatype="inline"><tex Notation="TeX">${\rm f}_{\rm T}$</tex></formula> SiGe HBT Technology

Liu

Trasser

Schumacher

2010

IEEE Microw. Wireless Compon. Lett.

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show abstract

“…Next, defining , the component of the current in the first quadrant becomes (8) Inserting this into (5) in polar coordinates gives (9) Factoring out the terms not dependent on and noting that where is the speed of light, yields (10) Solving the integral gives (11) Because for , the input current from the port can be calculated from (7) (12) and thus (13) To take the sum of all 4 quadrants, the E-field is multiplied by 4, and remembering that the components of the currents cancel due to symmetry, making (14) This means that the electric field in the far-field region will change directions when . This is due to the fact that when the length of line from the virtual short on the axis to the port on the axis is less than , which means there is no node, or point on the line where the amplitude of the standing wave is zero.…”

Section: Solution To Currents On the Ringmentioning

confidence: 99%

Multi-Port Driven Radiators

Bowers

Hajimiri

2013

IEEE Trans. Microwave Theory Techn.

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Integrated multi-port driven (MPD) radiator design is presented as an approach that takes advantage of the increased design space offered by using a hybrid design of an antenna with multiple ports and its driver circuitry integrated together on a single substrate. This reduces costly losses by eliminating independent elements for power combination, output impedance matching networks, and power transfer by engineering current patterns on a chip based on the desired far field pattern. The electromagnetic radiation produced by a circularly polarized MPD antenna is calculated analytically to provide design intuition, with supporting electromagnetic simulations. A single element 160 GHz MPD antenna and the supporting driver circuitry is designed and fabricated in a 0.13 SiGe BiCMOS process. A tuned 8 phase ring oscillator generates the signal with each phase feeding class A power amplifiers that drive the antenna. The radiator achieves 4.6 dBm single element effective isotropically radiated power (EIRP) and total radiated power of 2.0 dBm at 161 GHz while consuming 117.5 mA DC current from a 3.3 V source. Measurements of three frequency bands at 145, 154 and 161 GHz show greater than 0 dBm EIRP for each band, demonstrating the wide band nature of the antenna.Index Terms-Antenna theory and design, EM simulation, integrated microwave circuits, integrated radiators, millimeterwave silicon RFICs, on-chip antennas, quasi-optical power combining, SiGe BiCMOS.

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“…In CMOS technology, a 114GHz low power [1] and a 192GHz pushpush VCO [2] were reported in 130nm technology, and a 140GHz fundamental frequency VCO was reported in a 90nm CMOS process [3]. In Bipolar / BiCMOS technology, an InP D-HBT VCO was reported at a frequency up to 215GHz [6] and a SiGe distributed-LC push-push VCO was reported up to 278 GHz [7]. Table I summarizes the performance of state-of-the-art VCOs as well as this work.…”

Section: Introductionmentioning

confidence: 99%

A 312GHz fourth-harmonic voltage-controlled oscillator in 130nm SiGe BiCMOS technology

Lin¹,

Kotecki²

2009

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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Terahertz (>300GHz) voltage-controlled oscillators (VCO) are envisioned for applications in remote sensing, advanced imaging and telecommunication. In this paper, simulation results of a fourth-harmonic VCO are presented. The VCO has a tuning range from 312.11 to 312.67 GHz (0.18%), consumes 58.07mW of power and generates -62.4dBm (575.4pW) of output power into a 50 Ohm load. The phase noise is ~ -86.2 dBc/Hz with 10MHz offset frequency. The microchip area is 450µm×340µm. A 130nm SiGe BiCMOS technology is utilized for the high f T (>200GHz) and f max (>280GHz) of the NPN transistors. This VCO provides the highest output frequency with lumped oscillation topology in SiGe process reported till now.

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A monolithically integrated 190-GHz SiGe push-push oscillator

Cited by 36 publications

References 15 publications

33–43 GHz and 66–86 GHz VCO With High Output Power in an 80 GHz <formula formulatype="inline"><tex Notation="TeX">${\rm f}_{\rm T}$</tex></formula> SiGe HBT Technology

33–43 GHz and 66–86 GHz VCO With High Output Power in an 80 GHz <formula formulatype="inline"><tex Notation="TeX">${\rm f}_{\rm T}$</tex></formula> SiGe HBT Technology

Multi-Port Driven Radiators

A 312GHz fourth-harmonic voltage-controlled oscillator in 130nm SiGe BiCMOS technology

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