International Technical Digest on Electron Devices
DOI: 10.1109/iedm.1990.237195
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A new efficient method for the transient simulation of three-dimensional interconnect structures

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Cited by 28 publications
(13 citation statements)
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“…For the substrate problem, these methods pose serious challenges. With FDM, a uniformly discretized mesh is used [5], [13], therefore incurring substrate overmeshing which yields unnecessarily dense grids far from contact sources. Thus, although this method leads to a straightforward resistor network, the resulting matrix sizes are prohibitive due to the substrate size which becomes a real bottleneck.…”
Section: Introductionmentioning
confidence: 99%
“…For the substrate problem, these methods pose serious challenges. With FDM, a uniformly discretized mesh is used [5], [13], therefore incurring substrate overmeshing which yields unnecessarily dense grids far from contact sources. Thus, although this method leads to a straightforward resistor network, the resulting matrix sizes are prohibitive due to the substrate size which becomes a real bottleneck.…”
Section: Introductionmentioning
confidence: 99%
“…When analyzing high-performance integrated circuit designs, it is well known that the single lumped resistor-capacitor (RC) model of interconnect is insufficiently accurate. For analysis (or simulation), research has been carried out of the use of model order reduction (MOR) [1][2][3].…”
Section: Introductionmentioning
confidence: 99%
“…It has proposed in [16] for parametric interconnect analysis. SBT been shown [1] that reasonably accurate electro-quasistatic, technique [17] is proposed for tightly coupled interconnects or transient interconnect, simulations could be performed by with process variations. All these methods pose specific ascomputing the time evolution of the electric field both inside sumptions on the models, and their potential for general appliand outside the conductors via a finite-difference discretiza-cations is limited.…”
mentioning
confidence: 99%