A new generation of cryogenic silicon diode temperature sensors

Shwarts, Yu. M.; Sapon, S. V.

doi:10.1109/asdam.2008.4743327

“…Freeze-out causes a large increase in V A sensitivity below this temperature, however, sensitivity drops to a very low value for T amb < 10 K, compatible with measurements in [36]. I 0 was reduced to 1 µA during cryogenic measurements to mitigate the latter effect [33], the value being a trade-off between improved sensitivity and increased impact of array leakage at deepcryogenic temperatures [40]. The temperature sensitivity of R G decreases to a value close to zero for T amb < 11 K, inline with metal-like behavior [41].…”

Section: S -H : D M T -Asupporting

confidence: 73%

“…T a mb was selected for clearly showing the effects of T dr i f t , similar curves were found at other T a mb . observations in literature [33], [34]. The sharp V A increase for T amb < 50 K can be attributed to carrier freeze-out [34]- [36], also present in diodes specifically designed for cryogenic temperature sensing [37].…”

Section: S -H : D M T -Amentioning

confidence: 73%

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Hart

¹

,

Babaie

²

,

Vladimirescu

³

et al. 2021

IEEE J. Electron Devices Soc.

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This work presents a self-heating study of a 40nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel and in the surrounding silicon substrate, using the gate resistance and silicon diodes as sensors, respectively. Since self-heating depends on factors such as device geometry and power density, the test structure characterized in this work was specifically designed to resemble actual devices used in cryogenic qubit control ICs. Severe self-heating was observed at deep-cryogenic ambient temperatures, resulting in a channel temperature rise exceeding 50 K and having an impact detectable at a distance of up to 30 µm from the device. By extracting the thermal resistance from measured data at different temperatures, it was shown that a simple model is able to accurately predict channel temperatures over the full ambient temperature range from deep-cryogenic to room temperature. The results and modeling presented in this work contribute towards the full selfheating-aware IC design-flow required for the reliable design and operation of cryo-CMOS circuits.

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“…Deviation from exponential behavior in cryogenically operated diodes shown in Fig. 4, are compatible with previous observations in literature [31], [32]. The sharp 𝑉 𝐴 increase for 𝑇 𝑎𝑚𝑏 < 50 K can be attributed to carrier freeze-out [32]- [34], also present in diodes specifically designed for cryogenic temperature sensing [35].…”

Section: S -H : D M T -A a Diode-based Temperature Sensingsupporting

confidence: 91%

“…Freeze-out causes a large increase in 𝑉 𝐴 sensitivity below this temperature, however, sensitivity drops to a very low value for 𝑇 𝑎𝑚𝑏 < 10 K, compatible with measurements in [34]. 𝐼 0 was reduced to 1 µA during cryogenic measurements to mitigate the latter effect [31], the value being a trade-off between improved sensitivity and increased impact of array leakage at deepcryogenic temperatures [38]. The temperature sensitivity of 𝑅 𝐺 decreases to a value close to zero for 𝑇 𝑎𝑚𝑏 < 11 K, inline with metal-like behavior [39].…”

Section: S -H : D M T -A a Diode-based Temperature Sensingsupporting

confidence: 70%

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Hart¹,

Babaie²,

Vladimirescu³

et al. 2021

Preprint

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This work presents a self-heating study of a 40nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel and in the surrounding silicon substrate, using the gate resistance and silicon diodes as sensors, respectively. Since self-heating depends on factors such as device geometry and power density, the test structure characterized in this work was specifically designed to resemble actual devices used in cryogenic qubit control ICs. Severe self-heating was observed at deep-cryogenic ambient temperatures, resulting in a channel temperature rise exceeding 50 K and having an impact detectable at a distance of up to 30 µm from the device. By extracting the thermal resistance from measured data at different temperatures, it was shown that a simple model is able to accurately predict channel temperatures over the full ambient temperature range from deep-cryogenic to room temperature. The results and modeling presented in this work contribute towards the full selfheating-aware IC design-flow required for the reliable design and operation of cryo-CMOS circuits.

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“…Schottky barrier diodes (SBDs) are generally used for designing sensors for temperature, pressure and atmospheric gas composition [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. A SBD is also called a * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

Efeoǧlu¹,

Türüt²

2022

J. Phys. D: Appl. Phys.

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We have fabricated the Au/n-Si (D1), Au/Cu/n-Si (D2), Au/Cu(4nm)/n-Si (D3) and Au/Cu(2nm)/n-Si (D4) Schottky-barrier diodes (SBDs). The thickness of the Cu Schottky contact (SC) films for the D2, D3, and D4 diodes has been chosen as 100, 4 and 2 nm, respectively. We have investigated the thermal sensitivity from the voltage-temperature (V-T) characteristics of the SBDs at different current levels. The V-T measurements have been made in the temperature range from 10 K to 320 K with steps of 2 K, at the different current levels from 50 nA to 141.70 µA. The V-T curves have shown a good linearity degree for all SBDs. The slope dV/dT = α or thermal sensitivity coefficient α for each diode has decreased with increasing current level from 50 nA to 141.70 µA. But, it has been seen that the SBDs with the Cu SC have approximately the same α value as independent of metal thickness at the same current level. That is, the thermal sensitivity coefficient value has changed approximately from 2.48 mV/K at 50 nA to 1.82 at 141.70 µA for the SBDs with Cu Schottky contact as independent metal thickness. Furthermore, the α versus current level plots of the diodes have exhibited a linear behavior. The intercept α0 and slope dα/dI values of the α versus current level plots have been obtained as 2.80 mV/K and -0.0843 mV/(AK) for D2, and 2.85 mV/K and -0.092 mV/(AK) for D3 and 2.83 mV/K and -0.0876 mV/(AK) for D4. These values are very close to each other and the difference between the slope (dα/dI) values is small enough to be neglected.

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A new generation of cryogenic silicon diode temperature sensors

Cited by 6 publications

References 6 publications

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

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