A New High Breakdown Voltage Lateral Schottky Collector Bipolar Transistor on SOI: Design and Analysis

Schottky Collector Bipolar Transistor Without Impurity Doped Emitter and Base: Design and Performance

“…This region L s2 on the Schottky metal side reduces the peak electric field at the metal-base interface. Therefore, forming a two-zone base region can be accomplished easily in the SC-BCPT compared to the conventional two-zone base SCBT [10]. Using 2Dsimulations, we demonstrate that the SC-BCPT exhibits a significantly higher current gain β and cut-off frequency f T compared to the SCBT with the same device geometry.…”

“…One of the major drawbacks of the lateral SCBT structures is their low collector breakdown voltage. A number of treatments such as an extended BOX region and the two-zone base region have been proposed [10] to increase the collector breakdown voltage of the SCBT. A two-zone base region has a highly doped base at the emitter side and a low doped base region at the Schottky collector metal side.…”

“…This low doped base region reduces the peak electric field at the metal-base interface, consequently improving the breakdown voltage of the device. However, creating such a two-zone base on ultrathin SOI layers [10] using the conventional doping processes is difficult.…”

“…In hetero-junction bipolar transistors (HBTs), the use of Schottky collector provides a better tradeoff between the base-collector capacitance and the collector transit time [6]. In the recent past, lateral Schottky Collector Bipolar Transistors (SCBT) on SOI have been investigated extensively for their less collector storage time and low collector series resistance [7][8][9][10] compared to the conventional NPN/PNP BJT. One of the major drawbacks of the lateral SCBT structures is their low collector breakdown voltage.…”

New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional Simulation

“…The main purpose of this paper is to examine if these deep diffused P + -gates can be replaced by Schottky gates while maintaining the bipolar mode operation. Schottky contacts, although very widely used in high-speed devices [23][24][25][26][27][28][29][30], are typically not opted for bipolar mode operation because of the general perception that Schottky contacts are usually dominated by majority carrier injection with no or negligible minority carrier injection. For the first time, we demonstrate that using a metal with an appropriate work function and choosing a very lightly doped N-drift region, the Schottky gate can be made to operate in a bipolar mode resulting in a new Schottky gate Bipolar Mode Field Effect Transistor (SBMFET).…”