A new nonlinear I(V) model for FET devices including breakdown effects

Teyssier, Jean-Pierre; Viaud, J.P.; Quéré, Raymond

doi:10.1109/75.282573

Cited by 31 publications

(10 citation statements)

References 7 publications

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“…For FET's, we compare and with drain current derivatives and, for bipolar devices, we compare with A large number of other significative results in terms of various device characterization (MOSFET, SiC, pMHFET) and device modeling (breakdown, distributed models, etc.) have been obtained with the versatile pulsed -parameters measurement setup and have been published in [25]- [27].…”

Section: Measurement Consistency and Other Resultsmentioning

confidence: 99%

40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization

Teyssier

Bouysse

Ouarch

et al. 1998

IEEE Trans. Microwave Theory Techn.

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A versatile pulsed I(V ) and 40-GHz RF measurement system is described with all the know-how and methods to perform efficient, safe, and reliable nonlinear transistor measurements. Capability of discrimination between thermal and trapping effects with a pulse setup is demonstrated. Capture and emission constant times of trapping effects are measured. A method to electrically measure the thermal resistance and capacitance of transistors with a pulse setup is proposed.

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Section: Measurement Consistency and Other Resultsmentioning

confidence: 99%

40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization

Teyssier

Bouysse

Ouarch

et al. 1998

IEEE Trans. Microwave Theory Techn.

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“…Under largesignal conditions, however, reverse gate currents (shown in Fig. 1) appear [1,3,11] due to reverse conduction of the gate electrode associated with RF-induced gate-drain breakdown. If a fixed resistive divider is used for biasing the power amplifier, the reverse I G gate current produces a voltage drop in the internal resistor R GI .…”

Section: Theorymentioning

confidence: 99%

PAE improvement and compensation of small‐signal gain drift due to temperature on power amplifiers through active biasing

Torregrosa‐Penalva

López

Ortega-González

et al. 2003

Micro & Optical Tech Letters

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Power millimetre‐wave band transmitters are commonly formed by a chain of MESFET or HEMT GaAs MMIC power amplifiers. Under large‐signal conditions the reverse gate output current, which appears at the gate port of those devices due to drain‐gate breakdown mechanisms, causes a drop in the power amplifier's power added efficiency (PAE) figure, thus affecting the entire transmitter reliability. Additionally, it is desirable to obtain a stable performance from the transmitters for different ambient temperatures. In particular, millimetre‐wave wireless systems, such as the local multipoint distribution system (LMDS), require constant small signal gain for a wide range of temperatures. In this paper, an active bias network is used to compensate for both effects. The performance of the active bias network is shown to be superior, in terms of the power amplifier's PAE and the compensation of the power amplifier's small signal gain drifts due to temperature, to a conventional resistive divider when used for biasing the power amplifier. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 389–392, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11069

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“…The technique is widely adopted, and advanced systems also pulse radio sources to perform isodynamic network parameter measurements, particularly of high-power devices intended for pulsed-radar applications. Pulse techniques also facilitate nondestructive investigation of transistor breakdown regions [16].…”

Section: Quick Stepmentioning

confidence: 99%

Getting to the Heart of the Matter: Considerations for Large-Signal Modeling of Microwave Field-Effect Transistors

Parker

2015

IEEE Microwave

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A new nonlinear I(V) model for FET devices including breakdown effects

Cited by 31 publications

References 7 publications

40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization

40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization

PAE improvement and compensation of small‐signal gain drift due to temperature on power amplifiers through active biasing

Getting to the Heart of the Matter: Considerations for Large-Signal Modeling of Microwave Field-Effect Transistors

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