A new structure of electrically doped TFET for improving electronic characteristics

Yadav, Shivendra; Madhukar, Rahul; Sharma, Dheeraj; Aslam, Mohd.; Soni, Deepak; Sharma, Neeraj

doi:10.1007/s00339-018-1930-9

Cited by 29 publications

(8 citation statements)

References 21 publications

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“…The slope of I ds −V gs curve defines the amplification ability of the device, which is also known as g m . The g m of a device also depends on the I ds [9,10]. Hence, higher I ds reflect in terms of higher g m in the range of 830 µS (fig.…”

Section: Designed Device Specificationsmentioning

confidence: 99%

Impactful Study of F-shaped Tunnel FET

Singh

Yadav

2021

Silicon

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In this proposed work, a novel single gate F-shaped channel tunnel field effect transistor (SG-FC-TFET) is proposed and investigated. The impact of thickness of the source region and lateral tunneling length between the gate oxide and edge of the source region on analog and radio frequency parameters are investigated with appropriate source and drain lateral length through the 2D-TCAD tool. The slender shape of the source enhanced the electric file crowding effect at the corners of the source region which reflect in term of high On-current (I on ). The I on of proposed device is increased up to 10 −4 A/µm with reduced sub-threshold swing (SS) is 7.3 mV/decade and minimum turn-ON voltage (V on = 0.28 V). The analog/RF parameters of SG-FC-TFET are optimized. Keywords Band-to-Band tunneling (B2BT) • Tunnel Field Effect Transistor (TFET) • Energy band diagram (EBD) • source/channel interface (SCi) • Drain/channel interface (DCi) • Tunneling length • F-shaped channel

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Section: Designed Device Specificationsmentioning

confidence: 99%

Impactful Study of F-shaped Tunnel FET

Singh

Yadav

2021

Silicon

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“…Device structure consists of two isolated gates separated from each other by 5 nm, named as control gate (CG) and polarity gate (PG). To convert the

N^{+} - N^{+} - N^{+}

substrate region into the

N^{+} - I - P^{+}

region, metals with work functions 4.3 eV (aluminium) and 5.93 eV (platinum) are used for the electrodes of CG and PG, respectively, which results into the formation of a JL‐TFET [5, 22–29]. Also, to improve the reliability of the JL‐TFET, stack of gate oxide

(Si O_{2} + Hf O_{2} false)

has been used instead of single layer of

Si O_{2}

[22].…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

“…Thus, the created device is named as SGO‐JL double‐gate TFET with low work‐function LWLS‐SGO‐JL‐TFET. The fabrication of the device can be performed using the techniques similar to reported in [23, 24]. Temperature sensitivity of a device provides the impacts of temperature variation on its electrical behaviour.…”

Section: Introductionmentioning

confidence: 99%

Temperature sensitivity analysis of SGO metal strip JL TFET

Nigam

Kumar

Singh

et al. 2020

IET Circuits, Devices & Systems

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Temperature sensitivity is one of the major concern in conventional stacked gate-oxide junctionless tunnel-field-effect transistor (SGO-JL-TFET). In this regard, the authors have investigated the sensitivity toward the temperature variation of the SGO-JL double-gate TFET with low work-function live strip (LWLS-SGO-JL-TFET) and without LWLS-SGO-JL-TFET (SGO-JL-TFET). Furthermore, they have analysed and compared the impact of operating temperature variation on the DC, analogue/ radiofrequency and linearity performances of both the devices with the help of simulation results obtained using technology computer-aided design tool. It can be stated that the proposed device is less sensitive toward the temperature variation in terms of carrier concentration, electric field, on-state current and off-state current, as compared with conventional SGO-JL-TFET. Apart from these parameters, proposed device also demonstrates better temperature sensitivity in terms of analogue performance parameters such as transconductance (g m) cutoff frequency (f T), gain bandwidth product and maximum oscillating frequency (f max). Therefore, the proposed device can be a potential candidate for cryogenics and high-temperature applications.

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“…However, COVID-19 researchers are always in dilemma to select the appropriate DM-TFET biosensor as literature is flooded with such biosensors describing their applicability and hence, a decision based on proper guidance is required. Therefore, this manuscript is a small effort towards the comparative analysis of three basic structures which include physically doped (PD) [19], charge plasma (CP) and electrically doped (ED) DM-TFET biosensors [20][21][22][23]. Particularly, [24], this manuscript provides a strong interpretation for the selection of proper device technology for designing rapid and accurate biosensors in future.…”

Section: Introductionmentioning

confidence: 99%

Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors

Biswas

Rajan

Samajdar

2021

Silicon

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TFET based label-free biosensors are fast, sensitive and more power efficient as compared to CMOS biosensors, which are prone to short channel effects (SCEs). However, literature is flooded with various TFET biosensors that have become the reason of dilemma for researchers during pandemic situations like COVID-19. Therefore, in this work, a physically doped (PD), charge plasma (CP) and electrically doped (ED) dielectric modulated (DM) TFET based label-free biosensors are compared, which cover almost the entire range of doping and junctionless devices. Also, we found that the ED based TFET biosensors provide better current sensitivities of 5.10 × 10 7 , 4.77 × 10 8 and 7.11 × 10 8 for biomolecules with K=12, positive charge= 1 × 10 13 C/ cm 2 and negative charge= -1 × 10 13 C/cm 2 respectively. Hence, ED-DM-TFET based biosensors can act as promising candidates to provide better detection and identification quality.Keywords TFET . Biosensor . Physically doped (PD) . Charge plasma (CP) . Electrically doped (ED)

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A new structure of electrically doped TFET for improving electronic characteristics

Cited by 29 publications

References 21 publications

Impactful Study of F-shaped Tunnel FET

Impactful Study of F-shaped Tunnel FET

Temperature sensitivity analysis of SGO metal strip JL TFET

Sensitivity Analysis of Physically Doped, Charge Plasma and Electrically Doped TFET Biosensors

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