A new unified mobility extraction technique of In0.7Ga0.3As QW MOSFETs

Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V−1 · s−1

“…In doing so, we paid special attention to removing all parasitic components, such as source and drain series resistances (R S and R D ), and all of the parasitic gate capacitances (C gs_par and C gd_par ). 29) To accurately de-embed all the parasitic components, we focused on the fact that the intrinsic components of the MISFET scaled linearly with L g , whereas all the parasitic ones were independent of L g . Figure 4(a) shows the total on-resistance (R ON ) of the MISFETs at V DS = 10 mV as a function of L g .…”

Long‐channel In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As quantum‐well MOSFETs on InP substrate with record μ n_eff = 6960 cm 2 /V‐s

“…A key to accomplish this is to use high-mobility semiconductor materials as a channel, such as InGaAs, InAs and InSb [1][2][3]. As a matter of fact, there have been incredible progresses on an InGaAs MOSFET technology, in the context of high-k/InGaAs interface engineering, planar/non-planar device integration platform, source/drain contact engineering and co-integration of the InGaAs MOSFET with Si [4][5][6][7]. Indeed, several device schemes for high-performance InGaAs MOSFETs have been demonstrated in the literatures, appealing a strong potential for next generation high-performance and low-power logic applications [8][9][10][11].…”

“…3 Effective mobility (μ n_eff ) as a function of channel carrier concentration (n ch ) together with other groups' reports in the literature for benchmarking [8][9][10][11] In order to understand where these excellent transconductance characteristics come from, we have extracted the effective mobility (μ n_eff ) of the fabricated devices. In doing this, we have paid a special attention to carefully remove all the portions of parasitic components, such as source and drain resistances (R S and R D ), and all the parasitic gate capacitances (C gs_par and C gd_par ), as proposed in [7]. Fig.…”