A novel, 1.2 kV trench clustered IGBT with ultra high performance

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

“…In [13] thyristor action is shown (via simulations) through the p ring, but this relies on electron injection from an accumulation layer rather than from the n enhancement. Cluster IGBT [14] also displays a thyristor action with enhanced electron injection. In the CIGBT the p-well encloses the n-well and isolates it from the drift region; this is not the case in our structure and no charge compensation between the n-well and p-well is discussed in [14].…”

“…Cluster IGBT [14] also displays a thyristor action with enhanced electron injection. In the CIGBT the p-well encloses the n-well and isolates it from the drift region; this is not the case in our structure and no charge compensation between the n-well and p-well is discussed in [14]. The charge compensation between the pring and the n-enhancement is essential here for achieving a superjunction effect.…”

Comparison of trench gate IGBT and CIGBT devices for 3.3kV high power module applications

“…The CIGBT/TCIGBT operating mechanism has been discussed in several publications [2][3][4][5][6][7][8][9]. The deep p-well/n-drift junction is mainly used to support voltage in the off-state.…”

“…is a MOS-gate controlled three terminal thyristor structure device showing current saturation characteristics at high gate voltages and a short circuit performance. The excellent performance of the CIGBT family of devices is due to a unique 'self-clamping' feature that limits the potential of the cathode cells and also enables fast turn-off [2][3][4][5][6][7][8][9]. Experimental planar CIGBTs have shown superior performance to IGBT at 1.2kV to 3.3kV, while T-CIGBT has also been experimentally demonstrated at 1.2kV [3,4].…”

“…The excellent performance of the CIGBT family of devices is due to a unique 'self-clamping' feature that limits the potential of the cathode cells and also enables fast turn-off [2][3][4][5][6][7][8][9]. Experimental planar CIGBTs have shown superior performance to IGBT at 1.2kV to 3.3kV, while T-CIGBT has also been experimentally demonstrated at 1.2kV [3,4]. Importantly, reduction in total losses in MOS controlled power devices will result in a generation of high power modules that allow designers to This work was supported by grant from EPSRC/DTI, United Kingdom, with contract number DT/E004687/1 significantly minimize cooling requirements and board space without reducing output power or functionality.…”