A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

Increase in the scattering of electric field lines in a new high voltage SOI MESFET

“…The key advantage of SOI MESFET is higher mobility of the carriers in comparison to that of the SOI LDMOS. The other reason why the SOI MESFET is more suitable is to it can be used in ultra-large scale integration technology [27]. Recent advancements in E-mail address: m.anvarifard@guilan.ac.ir.…”

A novel symmetric GaN MESFET by dual extra layers of Si3N4

“…The MESFET is one of the most promising candidates for high power applications and it has received much attention in the construction of large scale integrated circuits due to its simplicity of construction and lack of dopant diffusion problems [1]. In addition, many works have been done recently on the MESFET structures [2][3][4][5][6][7][8][9][10].…”

Improved multi-recessed 4H–SiC MESFETs with double-recessed p-buffer layer

“…The reliability issues related to oxidation can be avoided by using SiC MESFETs [1][2][3][4][5]. The most important desire for 4H-SiC MESFET is to improve the maximum output power density (P max ) and RF characteristics simultaneously.…”