A novel high-performance lateral bipolar on SOI

Shahidi, G.; Tang, D.D.; Davari, B.; Taur, Yuan; McFarland, P.A.; Jenkins, K.A.; Danner, D. A.; Rodríguez, Manuel de León; Megdanis, A.C.; Petrillo, E.J.; Polcari, M.R.; Ning, T.H.

doi:10.1109/iedm.1991.235335

Cited by 40 publications

(5 citation statements)

References 4 publications

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“…In order to demonstrate the efficacy of the collector‐tub in enhancing the transistor performance, we have used both process as well as device simulation. We have first created the lateral bipolar transistor structure with and without the collector‐tub using standard experimental parameters available in the literature (Shahidi et al , 1991; Edholm et al , 1993; Parke and Hu, 1993; Shino et al , 1998) in the two‐dimensional process simulator ATHENA (Athena User's Manual, 2000) so that the simulated device structures are close to that of an experimentally fabricated device in terms of junction depths/curvatures and impurity distribution. This structure is then imported to a two‐dimensional device simulator ATLAS (Atlas User's Manual, 2000) to evaluate the device characteristics using appropriate models as discussed in the following sections.…”

Section: Simulation Methodologymentioning

confidence: 99%

Realizing high‐voltage thin film lateral bipolar transistors on SOI with a collector‐tub

Roy

Kumar

2005

Microelectronics International

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Purpose-The main purpose of this paper is to find a simple method to improve the breakdown voltage of BJTs fabricated on SOI. Design/methodology/approach-We have used two-dimensional device simulation to examine the effect of a collector tub on the collector breakdown of the SOI based BJTs. This method involves creating a collector tub by etching the buried oxide followed by an n-type implantation on the collector n/n þ junction side. Findings-First, our method reduces the peak electric field at the silicon film-BOX interface and secondly, the collector-tub facilitates the collector potential to be absorbed by both collector drift and substrate regions improving the collector breakdown significantly. Practical implications-An improved breakdown voltage improves the reliability of BJTs on SOI. Originality/value-Our results show that the BV CEO of the bipolar transistors with a collector-tub is enhanced by 2.7 times when compared with a conventional lateral bipolar transistor (LBT) with identical drift region doping. This improvement has an important practical value in the fabrication of SOI-based LBTs.

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Section: Simulation Methodologymentioning

confidence: 99%

Realizing high‐voltage thin film lateral bipolar transistors on SOI with a collector‐tub

Roy

Kumar

2005

Microelectronics International

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“…To increase the gain of bipolar transistors, heterogeneous junction is used in Base-Emitter contact [10]. As the integration of two types of transistors on a chip is challenging [11], bipolar transistors based on SOI have been studied and built because of the fact that they are used in system-on-chip (SoC) structures [12][13][14][15]. According to the applied bias voltage, it is possible to increase the gain of the transistor by the application a constant voltage to the gate terminal [16].…”

Section: Introductionmentioning

confidence: 99%

Design and Simulation of a Novel Hetero-junction Bipolar Transistor with Gate-Controlled Current Gain

Mehrabani

Fattah

Rahimi

2023

IJE

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A new structure for SiGe Hetero-junction Bipolar transistor (HBT) is designed and simulated using Silvaco simulator. The considered extra terminal gives the ability to control the transistor's current gain. By applying voltage to the gate terminal, the base effective width would be controlled. Decrement of the Base width yields to the carrier recombination rate reduction, let the emitted electrons to have higher chance to reach the collector. Considering extra terminal have two approaches. One is to improve the current gain of the transistor by applying a constant voltage to the gate and the other is to modify the characteristics of the transistor in such a way that the current gain became optimized. The current gain of the transistor without any gate voltage is about 50V, which increases to 750 for high and 50,000 for low collector currents with the gate voltage variation consideration. In addition, our final proposed gatecontrolled HBT with a large gate over the base and collector has the breakdown voltage of 8V and the cut-off frequency of about 11 GHz. The maximum FoM of 1200 is achieved using the proposed structure.

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Section: Introductionmentioning

confidence: 99%

“…With the advent of SOI technology, there have been many reports of novel lateral bipolar transistors built on thin-film SOI [3]- [9]. Many of them [3]- [7] were thin-base lateral transistors with a lightly-doped collector region, which suffer from base-push-out effect just like conventional vertical bipolar transistors. Some of them [8], [9] are "CMOS-like" in structure, having an oxide on top of the intrinsic-base (CMOS device body) region with base contact at the longend of the intrinsic base instead of directly on top of the intrinsic base.…”

Section: Introductionmentioning

confidence: 99%

On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

Cai

Ning

D’Emic

et al. 2014

IEEE J. Electron Devices Soc.

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The SOI symmetric lateral bipolar transistor is uniquely suitable for operation at high injection currents where the injected minority carrier density in the base region is larger than the base doping concentration. Transistors operating in high-injection can achieve record-high drive currents on the order of 3-5 mA/µm. The commonly used Shockley diode and bipolar current equations are modified to be applicable for all injection levels. Excellent agreement is shown between measured and modeled currents for data at V BC = 0. A novel partially depleted-base design can further increase the drive current and the current gain, especially at low V BE .

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A novel high-performance lateral bipolar on SOI

Cited by 40 publications

References 4 publications

Realizing high‐voltage thin film lateral bipolar transistors on SOI with a collector‐tub

Realizing high‐voltage thin film lateral bipolar transistors on SOI with a collector‐tub

Design and Simulation of a Novel Hetero-junction Bipolar Transistor with Gate-Controlled Current Gain

On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

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