A novel trench clustered insulated gate bipolar transistor (TCIGBT)

Spulber, O.; Sweet, M.; Vershinin, K.; Ngw, C.K.; Ngwendson, L.; Bose, J.V. Subhas Chandra; Souza, M.M. De; Narayanan, E.M. Sanakara

doi:10.1109/55.887483

Cited by 22 publications

(8 citation statements)

References 4 publications

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“…The reduction in short circuit capability in scaled TIGBT is attributed to the Collector Induced Barrier Lowering (CIBL) effect [8], which is caused by conductivity modulation in the MOS channels [9]. Unlike the IE effect in TIGBTs, The Trench Clustered IGBT (TCIGBT) utilizes controlled thyristor action (pnpn effect) to reduce on-state losses [10]. Moreover, TCIGBT exhibits a unique self-clamping feature to protect the cathode cells and achieve low saturation currents without sacrificing on-state forward voltage drop.…”

Section: Recommended For Publication By Associate Editormentioning

confidence: 99%

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Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Luo

Long

Sweet

et al. 2018

IEEE Trans. Electron Devices

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Abstract-3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools. Scaling down results in an enhancement of current gain of the inherent thyristor action which reduces the forward voltage drop even more than that of a scaled Trench IGBT (TIGBT). For identical switching losses, at a scaling factor k=3, the forward voltage drop is reduced by 20% at 300K and 30% at 400K when compared to the conventional TCIGBT (k=1). Most importantly, despite its lower conduction losses than an equivalent TIGBT, a scaled TCIGBT structure can maintain its short circuit capability, due to the additional scaling principle applied to the n-well and p-well regions, maintaining the self-clamping feature. Thus, TCIGBT is a more efficient chip-for-chip, reliable replacement of a TIGBT for energy savings in applications.Index Terms-IGBT, Clustered IGBT, Vce(sat) -Eoff trade-off, power semiconductor device, scaling rule, short circuit capability, self-clamping feature.

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Section: Recommended For Publication By Associate Editormentioning

confidence: 99%

“…The conductivity modulation is significantly enhanced because of thyristor action. Hence, the on-state loss is effectively reduced compared to the IGBT structure [10][11][12]. After the TCIGBT structure turns on, current is continuously controlled by the MOS gate.…”

Section: Recommended For Publication By Associate Editormentioning

confidence: 99%

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Luo

Long

Sweet

et al. 2018

IEEE Trans. Electron Devices

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“…The 2D nature of this electron current flow causes a potential drop across the R n ‐buffer which is parallel to the p‐anode region. When the potential drop is sufficient to forward bias the p‐anode/n‐buffer junction, the PNP transistor turns on and the device operates in the same way as a conventional TCIGBT [7]. The injected charge modulates the conductivity of the n‐drift region, decreasing its resistance and causing snap back in the current–voltage characteristic.…”

Section: Introductionmentioning

confidence: 99%

Snap‐back free shorted‐anode super‐junction TCIGBT

Luo

Sweet

Madathil

2018

IET Power Electronics

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In the SA-SJ-TCIGBT structure, due to the introduction of a segmented n + -anode, the device can operate in both forward conducting mode and freewheeling diode mode without any snap-back in the current voltage characteristics. In comparison to the SJ-TCIGBT structure, the proposed device shows significant improvement in trade-off relationship between forward voltage drop and switch off energy losses. Simulation results show that 25% decrease in switching energy losses can be achieved. Moreover, the tail current is effectively reduced without any increase in the overshoot voltage. Detailed two dimensional modelling of the structure shows that significant amount of excess electrons are extracted through the shorted-anode structure during turn-off process.

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“…Although V on decreases as the dose of the N-layer (D NL ) increases, D NL could not be too high due to it strongly affects the breakdown voltage (BV) [2][3][4][5]. In addition, in order to improve the short-circuit safe operating area, the saturation current of TIGBT needs to be decreased, which could be achieved by clamping the drain-to-source voltage (V DS ) of the trench nMOS [3,4,6]. However, clamping V DS by depleting the N-layer or by a selfbiased pMOS would limit the value of D NL , and thus limit the further reduction in V on [3,6].…”

mentioning

confidence: 99%

“…In addition, in order to improve the short-circuit safe operating area, the saturation current of TIGBT needs to be decreased, which could be achieved by clamping the drain-to-source voltage (V DS ) of the trench nMOS [3,4,6]. However, clamping V DS by depleting the N-layer or by a selfbiased pMOS would limit the value of D NL , and thus limit the further reduction in V on [3,6]. Using the integrated diodes is effective in clamping V DS , but it is costly [4].…”

mentioning

confidence: 99%

Low on‐state voltage and saturation current Trench Insulated Gate Bipolar Transistor with integrated Zener diode

Cheng

Chen

2017

Electron. lett.

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A novel Trench Insulated Gate Bipolar Transistor is proposed, where an integrated Zener diode is introduced. When the anode voltage becomes relatively high, the Zener diode could automatically clamp the potential of the carrier stored layer which locates beneath the base region of the active trench nMOS. Then in the blocking-state, the dose of the carrier stored layer could be as high as possible to reduce the on-state voltage without affecting the breakdown voltage. In the on-state, the drain-to-source voltage of the trench nMOS is also clamped, which helps to decrease the saturation current. Simulation results based on a 1.2 kV device show that, in comparison with the conventional one, the saturation current and the on-state voltage are decreased by 42.8 and 43.1%, respectively.

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A novel trench clustered insulated gate bipolar transistor (TCIGBT)

Cited by 22 publications

References 4 publications

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

Snap‐back free shorted‐anode super‐junction TCIGBT

Low on‐state voltage and saturation current Trench Insulated Gate Bipolar Transistor with integrated Zener diode

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